參數資料
型號: BTB16-XXXXXRG
廠商: 意法半導體
英文描述: 16A TRIACS
中文描述: 16A條雙向可控硅
文件頁數: 2/9頁
文件大小: 103K
代理商: BTB16-XXXXXRG
BTA16, BTB16 and T16 Series
2/9
Table 3: Absolute Maximum Ratings
Tables 4: Electrical Characteristics
(T
j
= 25°C, unless otherwise specified)
SNUBBERLESS and Logic Level (3 quadrants)
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current (full sine
wave)
D
2
PAK /
TO-220AB
T
c
= 100°C
16
A
TO-220AB Ins.
T
c
= 15°C
I
TSM
Non repetitive surge peak on-state
current (full cycle, T
j
initial = 25°C)
F = 50 Hz
t = 20 ms
160
A
F = 60 Hz
t = 16.7 ms
168
I
2
t
I
2
t Value for fusing
t
p
= 10 ms
144
A
2
s
dI/dt
Critical rate of rise of on-state cur-
rent I
G
= 2 x I
GT
, t
r
100 ns
F = 120 Hz
T
j
= 125°C
50
A/μs
V
DSM
/V
RSM
Non repetitive surge peak off-state
voltage
t
p
= 10 ms
T
j
= 25°C
V
DSM
/V
RSM
+ 100
V
I
GM
Peak gate current
t
p
= 20 μs
T
j
= 125°C
4
A
P
G(AV)
Average gate power dissipation
T
j
= 125°C
1
W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
Symbol
Test Conditions
Quadrant
T16
BTA16 / BTB16
Unit
T1635
SW
CW
BW
I
GT
(1)
V
D
= 12 V R
L
= 33
I - II - III
MAX.
35
10
35
50
mA
V
GT
I - II - III
MAX.
1.3
V
V
GD
V
D
= V
DRM
R
L
= 3.3 k
T
j
= 125°C
I - II - III
MIN.
0.2
V
I
H
(2)
I
T
= 500 mA
MAX.
35
15
35
50
mA
I
L
I
G
= 1.2 I
GT
I - III
MAX.
50
25
50
70
mA
II
60
30
60
80
dV/dt (2)
V
D
= 67 %V
DRM
gate open
T
j
= 125°C MIN.
500
40
500
1000
V/μs
(dI/dt)c (2)
(dV/dt)c = 0.1 V/μs
T
j
= 125°C
MIN.
-
8.5
-
-
A/ms
(dV/dt)c = 10 V/μs
T
j
= 125°C
-
3.0
-
-
Without snubber
T
j
= 125°C
8.5
-
8.5
14
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