參數(shù)資料
型號: BTA06GP
廠商: 意法半導(dǎo)體
英文描述: Triacs(雙向可控硅)
中文描述: 雙向可控硅(雙向可控硅)
文件頁數(shù): 3/4頁
文件大小: 59K
代理商: BTA06GP
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
180
O
= 180
o
= 120
o
= 90
o
= 60
o
= 30
o
T(RMS)
I
(A)
P(W)
Fig.1 :
Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(curves are cut off by (dI/dt)c limitation)
0
20
40
60
80
100
120
140
0
1
2
3
4
5
6
7
-105
-110
-115
-120
-125
P (W)
Rth = 0 C/W
2.5 C/W
5 C/W
10 C/W
Tamb ( C)
Tcase ( C)
o
Fig.2 :
Correlation between maximum RMS power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact.
0
10 20 30 40 50 60 70 80 90 100110 120130
0
1
2
3
4
5
6
7
= 180
o
Tcase( C)
I
(A)
T(RMS)
Fig.3 :
RMS on-state current versus case temperature.
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
0.01
0.1
1
Zth/Rth
Zth(j-c)
Zth(j-a)
tp(s)
Fig.4 :
Relative variation of thermal impedance versus
pulse duration.
Fig.5 :
Relative variation of gate trigger current and
holding current versus junction temperature.
Fig.6 :
Non Repetitive surge peak on-state current
versus number of cycles.
BTA06 GP
3/4
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