參數(shù)資料
型號: BTA06GP
廠商: 意法半導(dǎo)體
英文描述: Triacs(雙向可控硅)
中文描述: 雙向可控硅(雙向可控硅)
文件頁數(shù): 2/4頁
文件大?。?/td> 59K
代理商: BTA06GP
GATECHARACTERISTICS
(maximum values)
PG (AV)= 1W
PGM= 10W (tp = 20
μ
s)
Symbol
Parameter
Value
Unit
Rth (j-a)
Junction to ambient
60
°
C/W
Rth (j-c) DC Junction to case for DC
4
°
C/W
Rth (j-c) AC
Junction to case for 360
°
conduction angle
( F= 50 Hz)
3
°
C/W
Symbol
Test Conditions
Quadrant
Suffix
Unit
GP
IGT
VD=12V
(DC)
RL=33
Tj=25
°
C
I-II-III
MAX
50
mA
IV
MAX
75
VGT
VD=12V
(DC)
RL=33
Tj=25
°
C
I-II-III-IV
MAX
1.5
V
VGD
VD=VDRMRL=3.3k
Tj=110
°
C
I-II-III-IV
MIN
0.2
V
tgt
VD=VDRM
dIG/dt = 3A/
μ
s
IG= 500mA
Tj=25
°
C
I-II-III-IV
TYP
2
μ
s
IL
IG=1.2 IGT
Tj=25
°
C
I-III-IV
TYP
20
mA
II
40
IH *
IT= 100mA gate open
Tj=25
°
C
MAX
13
mA
VTM *
ITM= 8.5A
tp= 380
μ
s
Tj=25
°
C
MAX
1.4
V
IDRM
IRRM
VDRM
VRRM
Rated
Rated
Tj=25
°
C
MAX
0.01
mA
Tj=110
°
C
MAX
0.5
dV/dt *
Linear slope up to VD=67%VDRM
gate open
Tj=110
°
C
MIN
30
V/
μ
s
TYP
100
(dV/dt)c *
(dI/dt)c= 1.8A/ms
Tj=110
°
C
MIN
1
V/
μ
s
TYP
10
* For either polarity of electrode A
2
voltage with reference to electrode A
1
.
IGM= 4A (tp = 20
μ
s)
VGM= 16V (tp = 20
μ
s).
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
BTA06 GP
2/4
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