參數(shù)資料
型號: BT258X_SERIES
廠商: NXP Semiconductors N.V.
元件分類: TVS-瞬態(tài)抑制二極管
英文描述: Transient Voltage Suppressor Diodes
中文描述: 晶閘管邏輯電平
文件頁數(shù): 3/6頁
文件大?。?/td> 48K
代理商: BT258X_SERIES
Philips Semiconductors
Product specification
Thyristors
logic level
BT258X series
Fig.1. Maximum on-state dissipation, P
, versus
average on-state current, I
T(AV)
, where
a = form factor = I
T(RMS)
T(AV)
.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
, versus pulse width t
p
, for
sinusoidal currents, t
p
10ms.
Fig.3. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
hs
Fig.4. Maximum permissible non-repetitive peak
on-state current I
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
hs
90C.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25C), versus junction temperature T
j
.
0
2
4
6
0
2
4
6
8
a = 1.57
1.9
2.2
2.8
4
IT(AV) (A)
Ptot (W)
Ths(max) (C)
125
120
115
110
105
100
95
90
85
30
4
conduction
60
90
120
180
2.8
2.2
1.9
1.57
form
1
10
100
1000
0
40
Number of half cycles at 50Hz
ITSM / A
10
20
30
50
60
70
80
T
ITSM
time
I
T
Tj initial = 25 C max
10
10us
100
1000
100us
1ms
10ms
T / s
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
dI /dt limit
0.01
0.1
1
10
0
4
8
12
16
20
24
surge duration / s
IT(RMS) / A
-50
0
50
100
150
0
1
2
3
4
5
6
7
8
9
Ths / C
IT(RMS) / A
90 C
-50
0
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
T50
VGT(Tj)
VGT(25 C)
October 2002
3
Rev 2.000
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