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參數(shù)資料
| 型號： | BT258X_SERIES |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | 晶閘管邏輯電平 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 48K |
| 代理商： | BT258X_SERIES |
Philips Semiconductors
Product specification
Thyristors
logic level
BT258X series
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
R.M.S. isolation voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
≤
65% ; clean and dustfree
MIN.
-
TYP.
-
MAX.
2500
UNIT
V
-
10
-
pF
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-hs
Thermal resistance
junction to heatsink
R
th j-a
Thermal resistance
junction to ambient
CONDITIONS
with heatsink compound
without heatsink compound
in free air
MIN.
-
-
-
TYP.
-
-
55
MAX.
5.0
6.9
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
I
GT
Gate trigger current
I
L
Latching current
I
H
Holding current
V
T
On-state voltage
V
GT
Gate trigger voltage
CONDITIONS
V
D
= 12 V; I
T
= 0.1 A
V
D
= 12 V; I
GT
= 0.1 A
V
= 12 V; I
GT
= 0.1 A
I
T
= 16 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= V
DRM(max)
; I
T
= 0.1 A; T
j
= 110 C
V
D
= V
DRM(max)
; V
R
= V
RRM(max)
; T
j
= 125 C
MIN.
-
-
-
-
-
0.1
-
TYP.
50
0.4
0.3
1.3
0.4
0.2
0.1
MAX.
200
10
6
1.6
1.5
-
0.5
UNIT
μ
A
mA
mA
V
V
V
mA
I
D
, I
R
Off-state leakage current
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
dV
D
/dt
Critical rate of rise of
off-state voltage
t
gt
Gate controlled turn-on
time
t
q
Circuit commutated
turn-off time
CONDITIONS
V
= 67% V
; T
= 125 C;
exponential waveform; R
GK
= 100
I
TM
= 10 A; V
D
= V
DRM(max)
; I
G
= 5 mA;
dI
G
/dt = 0.2 A/
μ
s
V
D
= 67% V
DRM(max)
; T
j
= 125 C;
I
= 12 A; V
R
/dt = 10 A/
μ
s;
dV
D
/dt = 2 V/
μ
s; R
GK
= 1 k
MIN.
50
TYP.
100
MAX.
-
UNIT
V/
μ
s
-
2
-
μ
s
-
100
-
μ
s
October 2002
2
Rev 2.000
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