- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369515 > BT168BW (NXP SEMICONDUCTORS) Thyristors logic level for RCD/ GFI/ LCCB applications(應(yīng)用于RCD/ GFI/ LCCB的可控硅邏輯電平) PDF資料下載
參數(shù)資料
| 型號： | BT168BW |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | Thyristors logic level for RCD/ GFI/ LCCB applications(應(yīng)用于RCD/ GFI/ LCCB的可控硅邏輯電平) |
| 中文描述： | 1 A, 200 V, SCR |
| 封裝： | PLASTIC, SOT-223, 4 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 52K |
| 代理商： | BT168BW |
Philips Semiconductors
Product specification
Thyristors
logic level for RCD/ GFI/ LCCB Applications
BT168W series
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-sp
Thermal resistance
junction to solder point
R
th j-a
Thermal resistance
junction to ambient
CONDITIONS
MIN.
-
TYP.
-
MAX.
15
UNIT
K/W
pcb mounted, minimum footprint
pcb mounted, pad area as in fig:14
-
-
156
70
-
-
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
I
GT
Gate trigger current
I
L
Latching current
I
H
Holding current
V
T
On-state voltage
V
GT
Gate trigger voltage
CONDITIONS
V
D
= 12 V; I
T
= 10 mA; gate open circuit
V
D
= 12 V; I
GT
= 0.5 mA; R
GK
= 1 k
V
= 12 V; I
GT
= 0.5 mA; R
GK
= 1 k
I
T
= 2 A
V
D
= 12 V; I
T
= 10 mA; gate open circuit
V
= V
; I
T
= 10 mA; T
j
= 125 C;
gate open circuit
V
D
= V
; V
R
= V
RRM(max)
; T
j
= 125 C;
R
GK
= 1 k
MIN.
20
-
-
-
-
0.2
TYP.
50
2
2
1.35
0.5
0.3
MAX.
200
6
5
1.5
0.8
-
UNIT
μ
A
mA
mA
V
V
V
I
D
, I
R
Off-state leakage current
-
0.05
0.1
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
dV
D
/dt
Critical rate of rise of
off-state voltage
t
gt
Gate controlled turn-on
time
t
q
Circuit commutated
turn-off time
CONDITIONS
V
= 67% V
; T
= 125 C;
exponential waveform; R
GK
= 1 k
I
TM
= 2 A; V
= V
DRM(max)
; I
G
= 10 mA;
dI
G
/dt = 0.1 A/
μ
s
V
D
= 67% V
DRM(max)
; T
j
= 125 C;
I
= 1.6 A; V
R
TM
/dt = 30 A/
μ
s;
dV
D
/dt = 2 V/
μ
s; R
GK
= 1 k
MIN.
-
TYP.
25
MAX.
-
UNIT
V/
μ
s
-
2
-
μ
s
-
100
-
μ
s
September 1997
2
Rev 1.100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BT168EW | Thyristors logic level for RCD/ GFI/ LCCB applications |
| BT168W | Thyristors logic level for RCD/ GFI/ LCCB applications |
| BT168WSERIES | Thyristors logic level for RCD/ GFI/ LCCB applications |
| BT168DW | Thyristors logic level for RCD/ GFI/ LCCB applications(應(yīng)用于RCD/ GFI/ LCCB的可控硅邏輯電平) |
| BT168B | Thyristors logic level for RCD/ GFI/ LCCB applications(應(yīng)用于RCD/ GFI/ LCCB的可控硅邏輯電平) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BT168D | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors logic level for RCD/ GFI/ LCCB applications |
| BT168DW | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors logic level for RCD/ GFI/ LCCB applications |
| BT168E | 功能描述:SCR BULK MOSFET RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| BT168E,112 | 功能描述:SCR BULK MOSFET RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| BT168EW | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors logic level for RCD/ GFI/ LCCB applications |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。