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參數(shù)資料
| 型號(hào)： | BT137 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Triacs |
| 中文描述： | 雙向可控硅 |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大小： | 61K |
| 代理商： | BT137 |
Philips Semiconductors
Product specification
Triacs
BT137 series
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25C), versus junction temperature T
j
.
Fig.8. Normalised latching current I
(T
j
)/ I
L
(25C),
versus junction temperature T
j
.
Fig.9. Normalised holding current I
(T
j
)/ I
H
(25C),
versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dI
/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dI
T
/dt.
-50
0
100
150
0
0.5
1
1.5
2
2.5
3
BT137
T50
IGT(Tj)
IGT(25 C)
T2+ G+
T2+ G-
T2- G-
T2- G+
0
0.5
1
1.5
VT / V
2
2.5
3
0
5
10
15
20
25
BT137
IT / A
Tj = 125 C
Tj = 25 C
typ
max
Vo = 1.264 V
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
TRIAC
Tj / C
IL(Tj)
IL(25 C)
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
0.01
0.1
1
10
BT137
Zth j-mb (K/W)
tp
P
D
t
bidirectional
unidirectional
-50
0
50
Tj / C
100
150
0
0.5
1
1.5
2
2.5
3
TRIAC
IH(Tj)
IH(25C)
0
50
100
150
1
10
100
1000
Tj / C
7.9
4.7
dV/dt (V/us)
2.8
dIcom/dt =
10 A/ms
6.1
3.6
off-state dV/dt limit
BT137...G SERIES
BT137 SERIES
BT137...F SERIES
October 1997
4
Rev 1.200
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| BT138SERIESE | Triacs sensitive gate |
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| BT138_SERIES | Triacs |
| BT138-700 | TRIAC|700V V(DRM)|12A I(T)RMS|TO-220 |
| BT138-700E | TRIAC|700V V(DRM)|12A I(T)RMS|TO-220 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BT137_SERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Triacs |
| BT137_SERIES_E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Triacs sensitive gate |
| BT137-500 | 制造商:TECCOR 制造商全稱:TECCOR 功能描述:Thyristor Product Catalog |
| BT137-500D | 制造商:Siemens 功能描述: |
| BT137-500E | 制造商:TECCOR 制造商全稱:TECCOR 功能描述:Thyristor Product Catalog |
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