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參數(shù)資料
| 型號： | BT137 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Triacs |
| 中文描述： | 雙向可控硅 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 61K |
| 代理商： | BT137 |
Philips Semiconductors
Product specification
Triacs
BT137 series
Fig.1. Maximum on-state dissipation, P
, versus rms
on-state current, I
T(RMS)
, where
α
= conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
20ms.
Fig.3. Maximum permissible non-repetitive peak
on-state current I
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
mb
≤
102C.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25C), versus junction temperature T
j
.
0
2
4
6
8
10
0
2
4
6
8
10
12
= 180
120
90
60
30
BT137
IT(RMS) / A
Ptot / W
Tmb(max) / C
125
121
117
113
109
105
101
1
-50
0
50
Tmb / C
100
150
0
2
4
6
8
10
BT137
102 C
IT(RMS) / A
BT137
10us
100us
T / s
10ms
100ms
10
100
1000
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T2- G+ quadrant
dI /dt limit
0
0.1
1
10
5
10
15
20
25
BT137
surge duration / s
IT(RMS) / A
1
1
10
Number of cycles at 50Hz
100
1000
0
BT137
ITSM / A
10
20
30
40
50
60
70
80
T
ITSM
time
I
Tj initial = 25 C max
T
-50
0
50
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
BT136
Tj / C
VGT(Tj)
VGT(25 C)
October 1997
3
Rev 1.200
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| BT138SERIESE | Triacs sensitive gate |
| BT138-500E | Triacs sensitive gate |
| BT138_SERIES | Triacs |
| BT138-700 | TRIAC|700V V(DRM)|12A I(T)RMS|TO-220 |
| BT138-700E | TRIAC|700V V(DRM)|12A I(T)RMS|TO-220 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BT137_SERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Triacs |
| BT137_SERIES_E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Triacs sensitive gate |
| BT137-500 | 制造商:TECCOR 制造商全稱:TECCOR 功能描述:Thyristor Product Catalog |
| BT137-500D | 制造商:Siemens 功能描述: |
| BT137-500E | 制造商:TECCOR 制造商全稱:TECCOR 功能描述:Thyristor Product Catalog |
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