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參數(shù)資料
| 型號： | BT131WSERIES |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Triacs logic level |
| 中文描述： | 雙向可控硅邏輯電平 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 53K |
| 代理商： | BT131WSERIES |
Philips Semiconductors
Product specification
Triacs
logic level
BT131W series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glasspassivated,sensitivegatetriacs
in a plastic envelope suitable for
surface mounting, intended for use in
general
purpose
switching
and
applications.
These
intended to be interfaced directly to
microcontrollers,
circuits and other low power gate
trigger circuits.
SYMBOL
PARAMETER
MAX.
MAX. UNIT
BT131W-
500
500
1
10
600
600
1
10
bidirectional
phase
devices
V
DRM
I
T(RMS)
I
TSM
Repetitive peak off-state voltages
RMS on-state current
Non-repetitive peak on-state current
V
A
A
control
are
logic
integrated
PINNING - SOT223
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
tab
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500
500
1
-600
600
1
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
-
V
I
T(RMS)
I
TSM
full sine wave; T
sp
≤
108 C
full sine wave; T
j
= 25 C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 1.5 A; I
= 0.2 A;
dI
G
/dt = 0.2 A/
μ
s
-
1
A
-
-
-
10
11
0.5
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
A
2
s
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
-
-
-
-
50
50
50
10
2
5
5
0.5
150
125
A/
μ
s
A/
μ
s
A/
μ
s
A/
μ
s
A
V
W
W
C
C
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
-40
-
T1
T2
G
4
1
2
3
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/
μ
s.
July 1998
1
Rev 1.000
相關PDF資料 |
PDF描述 |
|---|---|
| BT131W | Triacs logic level |
| BT132-500D | Triacs logic level |
| BT132_SERIES_D | Triacs logic level |
| BT132SERIESD | Triacs logic level |
| BT134-500D | Triacs logic level(雙向可控硅邏輯電平) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BT132 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs logic level |
| BT132_SERIES_D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Triacs logic level |
| BT132-500D | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs logic level |
| BT132-600D | 功能描述:雙向可控硅 THYR AND TRIACS RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| BT132-600D,116 | 功能描述:雙向可控硅 Thyristor TRIAC 600V 17.6A 3-Pin RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
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