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參數(shù)資料
| 型號(hào)： | BST100 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | P-channel enhancement mode vertical D-MOS transistors(P溝道增強(qiáng)型垂直D-MOS晶體管) |
| 中文描述： | 300 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | PLASTIC, SOT-54 (TO-92) VARIANT, 3 PIN |
| 文件頁(yè)數(shù)： | 7/12頁(yè) |
| 文件大?。?/td> | 67K |
| 代理商： | BST100 |
April 1995
7
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BST100
PACKAGE OUTLINES
UNIT
A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
5.2
5.0
b
0.48
0.40
c
0.45
0.40
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1
(1)
max
L2
max
2.5
2.5
b1
0.66
0.56
DIMENSIONS (mm are the original dimensions)
Notes
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54 variant
TO-92
SC-43
A
L
0
2.5
5 mm
scale
b
c
D
b
1
L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads (on-circle)
SOT54 variant
1
2
3
L2
e1
e
97-04-14
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