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參數(shù)資料
| 型號： | BST100 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-channel enhancement mode vertical D-MOS transistors(P溝道增強型垂直D-MOS晶體管) |
| 中文描述： | 300 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | PLASTIC, SOT-54 (TO-92) VARIANT, 3 PIN |
| 文件頁數(shù)： | 3/12頁 |
| 文件大小： | 67K |
| 代理商： | BST100 |
April 1995
3
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BST100
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Note
1.
Transistor mounted on printed-circuit board, max. lead length 4 mm, mounting pad for drain lead
min. 10 mm x 10 mm.
Drain-source voltage
Gate-source voltage (open drain)
Drain current (DC)
Drain current (peak)
Total power dissipation up to T
amb
= 25
°
C (note 1)
Storage temperature range
Junction temperature
V
DS
±
V
GSO
I
D
I
DM
P
tot
T
stg
T
j
max.
max.
max.
max.
max.
60 V
20 V
0.3 A
0.8 A
1 W
65 to + 150
°
C
max.
150
°
C
From junction to ambient (note 1)
R
th j-a
=
125 K/W
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