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參數(shù)資料
| 型號(hào)： | BSPD25N06S2-40 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 29A I(D) | TO-252AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 55V的五（巴西）直|第29A條（?。﹟對(duì)252AA |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 587K |
| 代理商： | BSPD25N06S2-40 |
2002-06-10
Page 3
SPD25N06S2-40
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
g
fs
V
DS
2*
I
D
*
R
DS(on)max
,
I
D
=20A
8.5
17
-
S
Input capacitance
Output capacitance
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
534
710
pF
-
138
180
Reverse transfer capacitance
Turn-on delay time
-
40
60
V
DD
=30V,
V
GS
=10V,
I
D
=25A,
R
G
=22
-
8.8
13
ns
Rise time
Turn-off delay time
Fall time
-
24
36
-
24
36
-
23
35
Gate Charge Characteristics
Gate to source charge
Q
gs
Q
gd
Q
g
V
DD
=44V,
I
D
=25A
-
3
4
nC
Gate to drain charge
-
6
8
Gate charge total
V
DD
=44V,
I
D
=25A,
V
GS
=0 to 10V
-
13
18
Gate plateau voltage
V
(plateau)
V
DD
=44V,
I
D
=25A
-
5.7
-
V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
C
=25°C
-
-
29
A
Inv. diode direct current, pulsed
I
SM
V
SD
t
rr
Q
rr
-
-
116
Inverse diode forward voltage
Reverse recovery time
V
GS
=0V,
I
F
=25A
-
0.9
1.3
V
V
R
=30V,
I
F=
l
S
,
d
i
F
/d
t
=100A/μs
-
31
40
ns
Reverse recovery charge
-
40
50
nC
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