參數(shù)資料
型號(hào): BSPD25N06S2-40
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 29A I(D) | TO-252AA
中文描述: 晶體管| MOSFET的| N溝道| 55V的五(巴西)直|第29A條(丁)|對(duì)252AA
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 587K
代理商: BSPD25N06S2-40
2002-06-10
Page 1
SPD25N06S2-40
Opti
MOS
Power-Transistor
Product Summary
V
DS
R
DS(on)
I
D
55
V
40
m
29
A
Feature
N-Channel
Enhancement mode
175°C operating temperature
Avalanche rated
d
v
/d
t
rated
P- TO252 -3-11
Marking
2N0640
Type
SPD25N06S2-40
Package
P- TO252 -3-11 Q67060-S7427
Ordering Code
Maximum Ratings
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
A
Continuous drain current
T
C
=25°C
T
C
=100°C
Pulsed drain current
I
D
29
20
T
C
=25°C
Avalanche energy, single pulse
I
D puls
116
ID
=25A,
V
DD
=25V,
R
GS
=25
Repetitive avalanche energy, limited by
T
jmax
1)
Reverse diode d
v
/d
t
E
AS
80
mJ
E
AR
d
v
/d
t
6.8
IS
=25A,
V
DS
=44V,
d
i
/d
t
=200A/μs,
T
jmax
=175°C
Gate source voltage
Power dissipation
6
kV/μs
V
GS
P
tot
±20
68
V
T
C
=25°C
Operating and storage temperature
W
T
j ,
T
stg
-55... +175
55/175/56
°C
IEC climatic category; DIN IEC 68-1
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