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參數(shù)資料
| 型號： | BSP107 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode vertical D-MOS transistor |
| 中文描述： | 0.2 A, 200 V, 28 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 65K |
| 代理商： | BSP107 |
April 1995
4
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP107
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DSS
drain-source breakdown voltage
V
GS
= 0
I
D
= 10
μ
A
V
DS
= 130 V
V
GS
= 0
V
DS
= 70 V
V
GS
= 0.2 V
±
V
GS
= 15 V
V
DS
= 0
I
D
=1 mA
V
DS
= V
GS
I
D
= 20 mA
V
GS
= 2.6 V
I
D
= 150 mA
V
GS
= 10 V
I
D
= 250 mA
V
DS
= 15 V
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
200
V
I
DSS
drain-source leakage current
30
nA
I
DSX
drain-source leakage current
1
μ
A
±
I
GSS
gate-source leakage current
10
nA
V
GS(th)
gate threshold voltage
0.8
2.4
V
R
DS(on)
drain-source on-resistance
20
28
R
DS(on)
drain-source on-resistance
14
| Y
fs
|
transfer admittance
90
180
mS
C
iss
input capacitance
50
65
pF
C
oss
output capacitance
16
25
pF
C
rss
feedback capacitance
4
10
pF
Switching times (see Figs
2
and
3
)
t
on
switching-on time
I
D
= 250 mA
V
DD
= 50 V
V
GS
= 0
10 V
I
D
= 250 mA
V
DD
= 50 V
V
GS
= 0
10 V
2
10
ns
t
off
switching-off time
5
20
ns
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| BSP107T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 200MA I(D) | SOT-223 |
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| BSP108T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 500MA I(D) | SOT-223 |
| BSP10FA5 | 制造商:CIT 制造商全稱:CIT Relay & Switch 功能描述:CIT SWITCH |
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