參數(shù)資料
型號: BSP107
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel enhancement mode vertical D-MOS transistor
中文描述: 0.2 A, 200 V, 28 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 2/12頁
文件大?。?/td> 65K
代理商: BSP107
April 1995
2
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP107
FEATURES
Direct interface to C-MOS, TTL,
etc. due to low threshold voltage
High-speed switching
No secondary breakdown.
DESCRIPTION
N-channel enhancement mode
vertical D-MOS transistor in a
miniature SOT223 envelope.
Intended for use as a line current
interruptor in telephone sets and for
applications in relay, high-speed and
line transformer driver switching.
PINNING - SOT223
PIN
DESCRIPTION
1
2
3
4
gate
drain
source
drain
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
V
GS(th)
I
D
R
DS(on)
drain-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
200
2.4
200
28
V
V
mA
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM054
4
1
2
3
Top view
s
d
g
相關(guān)PDF資料
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