參數(shù)資料
型號(hào): BSP090
廠商: NXP SEMICONDUCTORS
元件分類(lèi): JFETs
英文描述: P-channel enhancement mode vertical D-MOS transistor
中文描述: 5.7 A, 30 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, SMD, 4 PIN
文件頁(yè)數(shù): 7/12頁(yè)
文件大?。?/td> 124K
代理商: BSP090
1997 Mar 13
7
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BSP090
Fig.6
Capacitance as a function of drain-source
voltage; typical values.
V
GS
= 0; f = 1 MHz; T
j
= 25
°
C.
(1) C
iss
.
(2) C
oss
.
(3) C
rss
.
handbook, halfpage
C
(pF)
0
8
(1)
(2)
(3)
16
VDS (V)
24
1500
500
0
1000
MGD729
Fig.7 Output characteristics; typical values.
T
amb
= 25
°
C; t
p
= 80
μ
s;
δ
= 0.
handbook, halfpage
(A)
20
0
4
8
VDS (V)
12
0
3.5 V
2.5 V
15
10
5
MGD730
VGS =
10 V
6 V
5 V
4.5 V
3 V
4 V
Fig.8 Transfer characteristics; typical values.
V
DS
=
10 V; T
amb
= 25
°
C; t
p
= 80
μ
s;
δ
= 0.
handbook, halfpage
0
20
10
0
2
ID
(A)
4
8
6
VGS (V)
MGD731
Fig.9
Gate-source voltage and drain-source
voltage as a function of total gate charge;
typical values.
V
DD
=
15 V; I
D
=
2.8 A; T
amb
= 25
°
C.
handbook, halfpage
0
8
4
0
10
VGS
(V)
VGS
18
12
6
0
VDS
(V)
20
QG (nC)
30
MGD732
VDS
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