參數資料
型號: BSP090
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: P-channel enhancement mode vertical D-MOS transistor
中文描述: 5.7 A, 30 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, SMD, 4 PIN
文件頁數: 2/12頁
文件大?。?/td> 124K
代理商: BSP090
1997 Mar 13
2
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BSP090
FEATURES
High speed switching
No secondary breakdown
Very low on-state resistance.
APPLICATIONS
Motor and actuator drivers
Power management
Synchronized rectification.
DESCRIPTION
P-channel enhancement mode vertical D-MOS transistor
in a 4-pin plastic SOT223 SMD package.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
PINNING - SOT223
PIN
SYMBOL
DESCRIPTION
1
2
3
4
g
d
s
d
gate
drain
source
drain
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM121
4
1
2
3
Top view
s
d
g
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
30
1.3
±
20
2.8
5.7
0.09
5
UNIT
V
DS
V
SD
V
GS
V
GSth
I
D
R
DSon
P
tot
drain-source voltage (DC)
source-drain diode forward voltage
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
1
V
V
V
V
A
W
I
S
=
1.25 A
I
D
=
1 mA; V
DS
= V
GS
T
s
= 100
°
C
I
D
=
2.8 A; V
GS
=
10 V
T
s
= 100
°
C
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相關代理商/技術參數
參數描述
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