10H/100H TTL DC ELECTRICAL CHARACTERISTICS" />
參數(shù)資料
型號(hào): BSO612CV G
廠商: Infineon Technologies
文件頁(yè)數(shù): 4/5頁(yè)
文件大?。?/td> 0K
描述: MOSFET N/P-CH 60V 2A 8-SOIC
其它圖紙: SO-8 Dual
標(biāo)準(zhǔn)包裝: 1
系列: SIPMOS®
FET 型: N 和 P 溝道
FET 特點(diǎn): 標(biāo)準(zhǔn)
漏極至源極電壓(Vdss): 60V
電流 - 連續(xù)漏極(Id) @ 25° C: 3A,2A
開(kāi)態(tài)Rds(最大)@ Id, Vgs @ 25° C: 120 毫歐 @ 3A,10V
Id 時(shí)的 Vgs(th)(最大): 4V @ 20µA
閘電荷(Qg) @ Vgs: 15.5nC @ 10V
輸入電容 (Ciss) @ Vds: 340pF @ 25V
功率 - 最大: 2W
安裝類(lèi)型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: PG-DSO-8
包裝: 標(biāo)準(zhǔn)包裝
產(chǎn)品目錄頁(yè)面: 1619 (CN2011-ZH PDF)
其它名稱(chēng): BSO612CVGINDKR
4
SY10H607
SY100H607
Micrel, Inc.
M9999-032906
hbwhelp@micrel.com or (408) 955-1690
10H/100H TTL DC ELECTRICAL CHARACTERISTICS(1)
TA= 0
°CTA= +25°CTA= + 85°C
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Condition
VOH
Output HIGH Voltage
2.5
2.5
2.5
VIOH = –15mA
2.0
2.0
2.0
IOH = –24mA
VOL
Output LOW Voltage
0.55
0.55
0.55
V
IOL = 48mA
VCCT = VCCE = 5.0V
±5%
Note:
1. DC levels such as VOH, VOL, etc., are standard for PECL and FAST devices, with the exceptions of: IOL =48mA at 0.5 VOL; and IOH = 24mA at 2.0 VOH.
TA= 0
°CTA= +25°CTA= + 85°C
Symbol
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
Condition
tPD
Propagation Delay
ns
CL = 50 pF
to Output
CLK to Q
——
6.0
——
6.0
——
6.0
MR to Q
——
6.0
——
6.0
——
6.0
tskpp
Part-to-Part Skew(1,4)
——
0.5
——
0.5
——
0.5
ns
CL = 50pF
tskew++
Within-Device Skew(2,4)
——
0.3
——
0.3
——
0.3
ns
CL = 50pF
tskew– –
Within-Device Skew(3,4)
——
0.3
——
0.3
——
0.3
ns
CL = 50pF
tS
Set-up Time
0.200
——
0.200
——
0.200
——
ns
tH
Hold Time
0.500
——
0.500
——
0.500
——
ns
tPW
Minimum Pulse Width
ns
CLK, MR
1.0
——
1.0
——
1.0
——
VPP
Minimum Input Swing
200
150
200
150
200
150
mV
tr
Rise/Fall Time
——
1.5
——
1.5
——
1.5
ns
CL = 50pF
tf
1.0V to 2.0V
fMAX
Max. Input Frequency(5,6)
160
——
160
——
160
——
MHz
AC ELECTRICAL CHARACTERISTICS(1)
VCCT = VCCE = 5.0V
±5%
Notes:
1. Device-to-Device Skew considering HIGH-to-HIGH transitions at common VCC level.
2. Within-Device Skew considering HIGH-to-HIGH transitions at common VCC level.
3. Within-Device Skew considering LOW-to-LOW transitions at common VCC level.
4. All skew parameters are guaranteed but not tested.
5. Frequency at which output levels will meet a 0.8V to 2.0V minimum swing.
6. The fMAX value is specified as the minimum guaranteed maximum frequency. Actual operational maximum frequency may be greater.
相關(guān)PDF資料
PDF描述
M2027TXG30 SWITCH ROCKER SP3T 0.4VA 28V
2641LH/2A22628L110V SWITCH ROCKER DPST 16A 125V
2641LH/2A23601L220V SWITCH ROCKER DPST 16A 125V
2641LH/2A23621L220V SWITCH ROCKER DPST 16A 125V
2641LH/2A23628L220V SWITCH ROCKER DPST 16A 125V
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BSO612CVGHUMA1 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N/P-CH 60V 3A/2A 8-Pin DSO 制造商:Infineon Technologies AG 功能描述:P-KANAL - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET N/P-CH 60V 2A 8-SOIC
BSO612CVNT 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N/P-CH 60V 3A/2A 8-Pin DSO 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N/P-CH 60V 3A/2A 8-Pin SO
BSO612CVT 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N/P-CH 60V 3A/2A 8-Pin DSO T/R
BSO613SPV 功能描述:MOSFET P-CH 60V 3.44A DSO-8 RoHS:否 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:SIPMOS® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
BSO613SPV G 功能描述:MOSFET SIPMOS PWR-TRNSTR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube