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參數(shù)資料
| 型號： | BSO315C |
| 英文描述： | Low Capacitance Transient Voltage Suppressor Diodes |
| 中文描述： | ？SIPMOS?；パa(bǔ)。 30V的。 SO - 8封裝。導(dǎo)通狀態(tài)（N / P系列）\u003d 0.11/0.25Ohm。編號（北）\u003d 3.4A。編號（規(guī)劃）\u003d - 2.3a作出。當(dāng)?shù)毓蛦T？ |
| 文件頁數(shù)： | 2/13頁 |
| 文件大?。?/td> | 150K |
| 代理商： | BSO315C |
1999-09-22
Page 2
Preliminary data
BSO 315 C
Termal Characteristics
Parameter
Symbol
Values
typ.
Unit
min.
max.
Dynamic Characteristics
Thermal resistance, junction - soldering point
(Pin 5, 6, 7, 8)
N
P
R
thJS
-
-
-
-
40
40
K/W
SMD version, device on PCB:
@ min. footprint; t
≤
10 sec.
@ 6 cm
2
cooling area
1)
; t
≤
10 sec.
@ min. footprint; t
≤
10 sec.
@ 6 cm
2
cooling area
1)
; t
≤
10 sec.
N
N
P
P
R
thJA
-
-
-
-
-
-
-
-
100
62.5
70
62.5
Static Characteristics
, at T
j
= 25 °C, unless otherwise specified
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= 250 μA
V
GS
= 0 V,
I
D
= -250 μA
Gate threshold voltage,
V
GS
=
V
DS
I
D
= 20 μA
I
D
= -230 μA
Zero gate voltage drain current
V
DS
= 30 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= 30 V,
V
GS
= 0 V,
T
j
= 125 °C
V
DS
= -30 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= -30 V,
V
GS
= 0 V,
T
j
= 125 °C
N
P
V
(BR)DSS
30
-30
-
-
-
-
V
N
P
V
GS(th)
1.2
-1
1.6
-1.5
2
-2.0
N
N
P
P
I
DSS
-
-
-
-
0.1
10
-0.1
-10
1
100
-1
-100
μA
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
V
GS
= -20 V,
V
DS
= 0 V
Drain-Source on-state resistance
V
GS
= 4.5 V,
I
D
= 2.9 A
V
GS
= -4.5 V,
I
D
= -1.8 A
Drain-Source on-state resistance
V
GS
= 10 V,
I
D
= 3.4 A
V
GS
= -10 V ,
I
D
= -2.3 A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2
(one layer, 70 μm thick) copper area for drain
connection. PCB is vertical without blown air.
N
P
I
GSS
-
-
10
-10
100
-100
nA
N
P
R
DS(on)
-
-
0.1
0.2
0.15
0.4
N
P
R
DS(on)
-
-
0.06
0.13
0.11
0.25
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