參數(shù)資料
型號: BSO303P H
廠商: Infineon Technologies
文件頁數(shù): 3/5頁
文件大?。?/td> 0K
描述: MOSFET 2P-CH 30V 7A DSO-8
標準包裝: 1
系列: OptiMOS™
FET 型: 2 個 P 溝道(雙)
FET 特點: 邏輯電平門
漏極至源極電壓(Vdss): 30V
電流 - 連續(xù)漏極(Id) @ 25° C: 7A
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: 21 毫歐 @ 8.2A,10V
Id 時的 Vgs(th)(最大): 2V @ 100µA
閘電荷(Qg) @ Vgs: 49nC @ 10V
輸入電容 (Ciss) @ Vds: 2678pF @ 25V
功率 - 最大: 2W
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應商設備封裝: PG-DSO-8
包裝: 標準包裝
其它名稱: BSO303P HDKR
3
SY10H607
SY100H607
Micrel, Inc.
M9999-032906
hbwhelp@micrel.com or (408) 955-1690
Dn
MR
TCLK/CLK
Qn + 1
LL
Z
L
HL
Z
H
XH
X
L
TRUTH TABLE
Z = Low to High Transition.
TA= 0
°CTA= +25°CTA= + 85°C
Symbol
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
Condition
IEE
PECL Power Supply Current
mA
10H
70
85
70
85
70
85
100H
65
80
70
85
75
95
ICCL
TTL Supply Current
100
120
100
120
100
120
mA
ICCH
TTL Supply Current
100
120
100
120
100
120
mA
IOS
Output Short Circuit Current
–100
—–225
–100
—–225
–100
—–225
mA
VCCT = VCCE = 5.0V
±5%
DC ELECTRICAL CHARACTERISTICS
10H PECL DC ELECTRICAL CHARACTERISTICS(1)
VCCT = VCCE = 5.0V
±5%
TA= 0
°CTA= +25°CTA= + 85°C
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Condition
IIH
Input HIGH Current
225
145
145
A
IIL
Input LOW Current
0.5
0.5
0.5
A
VIH
Input HIGH Voltage
3830
4160
3870
4190
3930
4280
mV
VCCT = 5.0V
VIL
Input LOW Voltage
3050
3520
3050
3520
3050
3555
mV
VCCT = 5.0V
VBB
Output Bias Voltage
3620
3730
3650
3750
3690
3810
mV
VCCT = 5.0V
Note:
1. PECL VIL, VIH, VOL, VOH, VBB are given for VCCT = VCCE = 5.0V and will vary 1:1 with power supply.
100H PECL DC ELECTRICAL CHARACTERISTICS(1)
VCCT = VCCE = 5.0V
±5%
TA= 0
°CTA= +25°CTA= + 85°C
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Condition
IIH
Input HIGH Current
225
145
145
A
IIL
Input LOW Current
0.5
0.5
0.5
A
VIH
Input HIGH Voltage
3835
4120
3835
4120
3835
4120
mV
VCCT = 5.0V
VIL
Input LOW Voltage
3190
3525
3190
3525
3190
3525
mV
VCCT = 5.0V
VBB
Output Bias Voltage
3620
3740
3620
3740
3620
3740
mV
VCCT = 5.0V
Note:
1. PECL VIL, VIH, VOL, VOH, VBB are given for VCCT = VCCE = 5.0V and will vary 1:1 with power supply.
相關PDF資料
PDF描述
M2023TXG45-DH SWITCH ROCKER DPDT 0.4VA 28V
M2023TXG45-DC SWITCH ROCKER DPDT 0.4VA 28V
M2032TYW01-JA SWITCH ROCKER 3PDT 6A 125V
M2026TJW01-FA-2A SWITCH ROCKER SP3T 6A 125V
M2023TJW01-FF-2A-F SWITCH ROCKER DPDT 6A 125V
相關代理商/技術參數(shù)
參數(shù)描述
BSO303PHXT 制造商:Infineon Technologies AG 功能描述:MOSFET 2P-CH 30V 7A DSO-8
BSO303PHXUMA1 制造商:Infineon Technologies AG 功能描述:Trans MOSFET P-CH 30V 7A 8-Pin DSO Dry 制造商:Infineon Technologies AG 功能描述:P-KANAL - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET 2P-CH 30V 7A DSO-8
BSO303PNTMA1 制造商:Infineon Technologies AG 功能描述:Trans MOSFET P-CH 30V 8.2A 8-Pin DSO 制造商:Infineon Technologies AG 功能描述:P-KANAL - Tape and Reel 制造商:Infineon Technologies AG 功能描述:P-KANAL - Cut TR (SOS) 制造商:Infineon Technologies AG 功能描述:MOSFET P-CHAN DUAL 30V DSO-8
BSO303PT 制造商:Infineon Technologies AG 功能描述:OPTIMOS-P -30V RON=21MW 8.2A L
BSO303SP 功能描述:MOSFET Dual P-Channel -30V MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube