參數(shù)資料
型號(hào): BSN254A
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: N-channel enhancement mode vertical D-MOS transistors
中文描述: 310 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封裝: PLASTIC, SC-43, SOT-54 (TO-92) VARIANT, 3 PIN
文件頁數(shù): 3/12頁
文件大小: 67K
代理商: BSN254A
2002 Feb 19
3
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN254; BSN254A
THERMAL CHARACTERISTICS
Note
1.
Device mounted on a printed-circuit board; maximum lead length 4 mm; mounting pad for drain lead minimum
10
×
10 mm.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient; note 1
125
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
2.8
600
100
21
10
MAX. UNIT
±
100
2
7.5
5
1
120
30
15
V
(BR)DSS
I
GSS
V
GSth
R
DSon
drain-source breakdown voltage
gate-source leakage current
gate-source threshold voltage
drain-source on-state resistance
I
D
= 10
μ
A; V
GS
= 0
V
GS
=
±
20 V; V
DS
= 0
I
D
= 1 mA; V
DS
= V
GS
I
D
= 20 mA; V
GS
= 2.4 V
I
D
= 300 mA; V
GS
= 10 V
V
DS
= 200 V; V
GS
= 0
I
D
= 300 mA; V
DS
= 25 V
V
DS
= 25 V; V
GS
= 0; f = 1 MHz
V
DS
= 25 V; V
GS
= 0; f = 1 MHz
V
DS
= 25 V; V
GS
= 0; f = 1 MHz
250
0.8
200
V
nA
V
μ
A
mS
pF
pF
pF
I
DSS
Y
fs
C
iss
C
oss
C
rss
Switching times
(see Figs 2 and 3)
drain-source leakage current
transfer admittance
input capacitance
output capacitance
feedback capacitance
t
on
turn-on time
I
D
= 250 mA; V
DD
= 50 V;
V
GS
= 0 to 10 V
I
D
= 250 mA; V
DD
= 50 V;
V
GS
= 10 to 0 V
6
10
ns
t
off
turn-off time
47
60
ns
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