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參數(shù)資料
| 型號(hào)： | BSN254A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | N-channel enhancement mode vertical D-MOS transistors |
| 中文描述： | 310 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | PLASTIC, SC-43, SOT-54 (TO-92) VARIANT, 3 PIN |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 67K |
| 代理商： | BSN254A |
2002 Feb 19
2
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN254; BSN254A
FEATURES
Direct interface to C-MOS, TTL, etc.
High-speed switching
No secondary breakdown
Low R
DSon
.
APPLICATIONS
Line current interruptor in telephone sets
Relay, high-speed and line transformer drivers.
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor
in a SOT54 (TO-92) variant package.
PINNING - SOT54 variant
PIN
DESCRIPTION
BSN254
BSN254A
1
2
3
gate
drain
source
source
gate
drain
handbook, halfpage
1
3
2
MAM146
s
d
g
Fig.1 Simplified outline and symbol.
note: various pinnings are available on request
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1.
Device mounted on a printed-circuit board; maximum lead length 4 mm; mounting pad for drain lead minimum
10
×
10 mm.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
DS
I
D
P
tot
R
DSon
V
GSth
drain-source voltage (DC)
drain current (DC)
total power dissipation
drain-source on-state resistance I
D
= 300 mA; V
GS
= 10 V
gate-source threshold voltage
2.8
250
310
1
5
2
V
mA
W
V
T
amb
≤
25
°
C
I
D
= 1 mA; V
DS
= V
GS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
V
GSO
I
D
I
DM
P
tot
T
stg
T
j
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
55
250
±
20
310
1.25
1
+150
150
V
V
mA
A
W
°
C
°
C
open drain
T
amb
≤
25
°
C; note 1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BSN254A AMO | 功能描述:MOSFET AMMORA MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BSN254A,126 | 功能描述:MOSFET AMMORA MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BSN254A | 制造商:NXP Semiconductors 功能描述:MOSFET N TO-92 |
| BSN254AAMO | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 300MA I(D) | TO-92VAR |
| BSN274 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode vertical D-MOS transistor |
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