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參數(shù)資料
| 型號： | BSH106/T3 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1050 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-88, 6 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 110K |
| 代理商： | BSH106/T3 |
Philips Semiconductors
Product specification
N-channel enhancement mode
MOS transistor
BSH106
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
a
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
a
); conditions: V
GS
≥
4.5 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-a
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
); parameter V
GS
Normalised Power Dissipation, PD (%)
0
20
40
60
80
100
120
0
25
50
75
100
125
150
Ambient Temperature, Ta (C)
BSH105
0.1
1
10
100
1000
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
Pulse width, tp (s)
Peak Pulsed Drain Current, IDM (A)
single pulse
D = 0.5
0.2
0.1
0.05
0.02
tp
D = tp/T
D
P
T
Normalised Drain Current, ID (%)
0
20
40
60
80
100
120
0
25
50
75
100
125
150
Ambient Temperature, Ta (C)
BSH105
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0.5
1
1.5
2
Drain-Source Voltage, VDS (V)
Drain Current, ID (A)
1.1 V
1.5 V
1.3 V
1.7 V
4.5V
Tj = 25 C
2.5V
VGS = 1.9 V
2.1 V
BSH105
0.01
0.1
1
10
100
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Peak Pulsed Drain Current, IDM (A)
d.c.
100 ms
10 ms
RDS(on) = VDS/ ID
tp = 100 us
1 ms
BSH105
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0
0.5
1
1.5
Drain Current, ID (A)
2
2.5
3
3.5
4
4.5
5
Drain-Source On Resistance, RDS(on) (Ohms)
VGS = 4.5 V
2.5 V
2.1 V
1.9 V
1.7 V
Tj = 25 C
1.5 V
August 1998
3
Rev 1.000
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