參數(shù)資料
型號(hào)： BSH106/T3
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： 1050 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SC-88, 6 PIN
文件頁數(shù)： 2/7頁
文件大?。?/td> 110K
代理商： BSH106/T3
Philips Semiconductors
Product specification
N-channel enhancement mode
MOS transistor
BSH106
ELECTRICAL CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 10
μ
A
MIN.
20
TYP. MAX. UNIT
-
-
V
V
DS
= V
GS
; I
D
= 1 mA
0.4
0.1
-
-
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
0.57
-
140
180
240
270
1.6
10
50
1.3
3.9
0.4
1.4
2
4.5
45
20
152
71
33
-
-
V
V
T
j
= 150C
R
DS(ON)
Drain-source on-state
resistance
V
GS
= 4.5 V; I
D
= 0.6 A
V
GS
= 2.5 V; I
D
= 0.6 A
V
GS
= 1.8 V; I
D
= 0.3 A
V
GS
= 2.5 V; I
D
= 0.6 A; T
j
= 150C
V
DS
= 16 V; I
D
= 0.6 A
200
250
300
375
-
100
100
10
-
-
-
-
-
-
-
-
-
-
m
m
m
m
S
nA
nA
μ
A
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
g
fs
I
GSS
I
DSS
Forward transconductance
Gate source leakage current V
GS
=
±
8 V; V
DS
= 0 V
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Input capacitance
Output capacitance
Feedback capacitance
V
DS
= 16 V; V
GS
= 0 V;
T
j
= 150C
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
C
iss
C
oss
C
rss
I
D
= 1 A; V
DD
= 20 V; V
GS
= 4.5 V
V
DD
= 20 V; I
D
= 1 A;
V
= 8 V; R
= 6
Resistive load
V
GS
= 0 V; V
DS
= 16 V; f = 1 MHz
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL
PARAMETER
I
DR
Continuous reverse drain
current
I
DRM
Pulsed reverse drain current
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
T
a
= 25 C
MIN.
-
TYP.
-
MAX.
1.05
UNIT
A
-
-
-
-
-
4.2
1
-
-
A
V
ns
nC
I
F
= 0.5 A; V
GS
= 0 V
I
F
= 0.5 A; -dI
/dt = 100 A/
μ
s;
V
GS
= 0 V; V
R
= 16 V
0.74
27
19
August 1998
2
Rev 1.000
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