- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄369499 > BSH101 (NXP SEMICONDUCTORS) N-channel enhancement mode MOS transistor PDF資料下載
參數(shù)資料
| 型號(hào)： | BSH101 |
| 廠(chǎng)商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | N-channel enhancement mode MOS transistor |
| 中文描述： | 700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大小： | 643K |
| 代理商： | BSH101 |
2000 Jul 19
5
Philips Semiconductors
Product specification
N-channel enhancement mode
MOS transistor
BSH101
CHARACTERISTICS
T
j
= 25
°
C unless otherwise speciTed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
72.2
11.3
3.6
2130
MAX.
100
±
100
0.81
0.93
UNIT
V
(BR)DSS
V
GSth
I
DSS
I
GSS
R
DSon
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
drain-source on-state resistance
V
GS
= 0; I
D
= 10
μ
A
V
GS
= V
DS
; I
D
= 1 mA
V
GS
= 0; V
DS
= 48 V
V
GS
=
±
20 V; V
DS
= 0
V
GS
= 10 V; I
D
= 0.35 A
V
GS
= 4.5 V; I
D
= 0.175 A
V
GS
= 0; V
DS
= 48 V; f = 1 MHz
V
GS
= 0; V
DS
= 48 V; f = 1 MHz
V
GS
= 0; V
DS
= 48 V; f = 1 MHz
V
GS
= 10 V; V
DD
= 30 V;
I
D
= 0.35 A; T
amb
= 25
°
C
V
DD
= 30 V; I
D
= 0.35 A;
T
amb
= 25
°
C
V
DD
= 30 V; I
D
= 0.35 A;
T
amb
= 25
°
C
60
1
V
V
nA
nA
pF
pF
pF
pC
C
iss
C
oss
C
rss
Q
G
input capacitance
output capacitance
reverse transfer capacitance
total gate charge
Q
GS
gate-source charge
150
pC
Q
GD
gate-drain charge
695
pC
Switching times
t
d(on)
turn-on delay time
V
GS
= 0 to 10 V; V
DD
= 30 V;
I
D
= 0.35 A; R
gen
= 6
V
GS
= 0 to 10 V; V
DD
= 30 V;
I
D
= 0.35 A; R
gen
= 6
V
GS
= 0 to 10 V; V
DD
= 30 V;
I
D
= 0.35 A; R
gen
= 6
V
GS
= 10 to 0 V; V
DD
= 30 V;
I
D
= 0.35 A; R
gen
= 6
V
GS
= 10 to 0 V; V
DD
= 30 V;
I
D
= 0.35 A; R
gen
= 6
V
GS
= 10 to 0 V; V
DD
= 30 V;
I
D
= 0.35 A; R
gen
= 6
3.5
ns
t
f
fall time
3.5
ns
t
on
turn-on switching time
7
ns
t
d(off)
turn-off delay time
9
ns
t
r
rise time
4.5
ns
t
off
turn-off switching time
13.5
ns
Source-drain diode
V
SD
source-drain diode forward
voltage
reverse recovery time
V
GD
= 0; I
S
= 0.5 A
1
V
t
rr
I
S
= 0.5 A; di/dt =
10 A/
μ
s
35
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BSH120T | Automotive Rectifier Diodes |
| BSH204 | Automotive Rectifier Diodes |
| BSK-1 | Automotive Rectifier Diodes |
| BSM05GD100D | TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 5A I(C) |
| BSM100GAL100D | TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 100A I(C) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BSH101T/R | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 700MA I(D) | TO-236AB |
| BSH102 | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:N-channel enhancement mode MOS transistor |
| BSH102T/R | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 1A I(D) | TO-236AB |
| BSH103 | 制造商:NXP Semiconductors 功能描述:MOSFET N SOT-23 制造商:NXP Semiconductors 功能描述:MOSFET, N, 30V, 0.85A, SOT-23 |
| BSH103 /T3 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。