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參數(shù)資料
| 型號： | BS62LV2000SC |
| 廠商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 英文描述： | Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| 中文描述： | 非常低功率/電壓CMOS SRAM的256K × 8位 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 282K |
| 代理商： | BS62LV2000SC |
R0201-BS62LV2000
Revision 2.3
April 2002
3
BSI
BS62LV2000
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP.
(1)
MAX.
UNITS
V
DR
Vcc for Data Retention
CE1
Vcc - 0.2V, CE2
0.2V,
V
IN
Vcc - 0.2V or V
IN
0.2V
1.5
--
--
V
I
CCDR
Data Retention Current
CE1
Vcc - 0.2V, CE2
0.2V,
V
IN
Vcc - 0.2V or V
IN
0.2V
--
0.01
1
uA
t
CDR
Chip Deselect to Data
Retention Time
Operation Recovery Time
0
--
--
ns
t
R
See Retention Waveform
T
RC
(2)
--
--
ns
1. Typical characteristics are at TA = 25
o
C.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/t
RC
.
DATA RETENTION CHARACTERISTICS
( TA = 0
o
C to + 70
o
C )
1. Vcc = 1.5V, T
A
= + 25
O
C
2. t
RC
= Read Cycle Time
DC ELECTRICAL CHARACTERISTICS
( TA = 0
o
C to + 70
o
C )
PARAMETER
NAME
Guaranteed Input Low
Voltage
(2)
Guaranteed Input High
Voltage
(2)
I
IL
Input Leakage Current
LOW V
CC
DATA RETENTION WAVEFORM (1)
( CE1 Controlled )
CE1
Data Retention Mode
≥
Vcc
t
CDR
Vcc
t
R
V
IH
V
IH
Vcc
V
DR
1.5V
CE1 Vcc - 0.2V
LOW V
CC
DATA RETENTION WAVEFORM (2)
( CE2 Controlled )
CE2
Data Retention Mode
Vcc
t
CDR
Vcc
t
R
V
IL
V
IL
Vcc
V
DR
1.5V
CE2
0.2V
PARAMETER
TEST CONDITIONS
MIN. TYP.
(1)
MAX.
UNITS
Vcc=3.0V
V
IL
Vcc=5.0V
-0.5
--
0.8
V
Vcc=3.0V
2.0
2.2
--
V
IH
Vcc=5.0V
--
Vcc+0.2
V
Vcc = Max, V
IN
= 0V to Vcc
--
1
uA
I
OL
Output Leakage Current
Vcc = Max, CE1 = V
IH
or CE2=V
IL
or OE = V
IH
, V
I/O
= 0V to Vcc
--
--
1
uA
Vcc=3.0V
V
OL
Output Low Voltage
Vcc = Max, I
OL
= 2mA
Vcc=5.0V
--
--
0.4
V
Vcc=3.0V
V
OH
Output High Voltage
Vcc = Min, I
OH
= -1mA
Vcc=5.0V
2.4
--
--
V
Vcc=3.0V
--
--
20
I
CC
Operating Power Supply
Current
Vcc = Max, CE1= V
IL
, CE2=V
IH
I
DQ
= 0mA, F = Fmax
(3)
Vcc=5.0V
--
--
40
mA
Vcc=3.0V
--
--
1
I
CCSB
Standby Current-TTL
Vcc = Max, CE1 = V
IH
or CE2=V
IL
I
DQ
= 0mA
Vcc=5.0V
--
--
2
mA
Vcc=3.0V
--
0.15
3
I
CCSB1
Standby Current-CMOS
Vcc = Max, CE1
Vcc-0.2V or
CE2
0.2V ;V
IN
Vcc - 0.2V or
V
IN
0.2V
Vcc=5.0V
--
3
10
uA
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