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參數(shù)資料
| 型號： | BS62LV2000SC |
| 廠商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 英文描述： | Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| 中文描述： | 非常低功率/電壓CMOS SRAM的256K × 8位 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 282K |
| 代理商： | BS62LV2000SC |
R0201-BS62LV2000
Revision 2.3
April 2002
2
Name
Function
A0-A17 Address Input
These 18 address inputs select one of the 262,144 x 8-bit words in the RAM
CE1 Chip Enable 1 Input
CE2 Chip Enable 2 Input
CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active when
data read from or write to the device. If either chip enable is not active, the device is
deselected and is in a standby power mode. The DQ pins will be in the high
impedance state when the device is deselected.
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impedance state when OE is inactive.
These 8 bi-directional ports are used to read data from or write data into the RAM.
WE Write Enable Input
OE Output Enable Input
DQ0-DQ7 Data Input/Output
Ports
Vcc
Power Supply
Gnd
Ground
TRUTH TABLE
PIN DESCRIPTIONS
BSI
BS62LV2000
C
IN
Input
Capacitance
Input/Output
Capacitance
V
IN
=0V
6
pF
C
DQ
V
I/O
=0V
8
pF
RANGE
AMBIENT
TEMPERATURE
0
O
C to +70
O
C
Vcc
Commercial
2.7V ~ 5.5V
Industrial
-40
O
C to +85
O
C
2.7V ~ 5.5V
ABSOLUTE MAXIMUM RATINGS
(1)
OPERATING RANGE
CAPACITANCE
(1)
(TA = 25
o
C, f = 1.0 MHz)
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
1. This parameter is guaranteed and not tested.
SYMBOL
PARAMETER
Terminal Voltage with
Respect to GND
RATING
-0.5 to
Vcc+0.5
UNITS
V
TERM
V
T
BIAS
Temperature Under Bias
C
-40 to +125
O
T
STG
Storage Temperature
C
-60 to +150
O
P
T
Power Dissipation
1.0
W
I
OUT
DC Output Current
mA
20
MODE
WE
CE1
CE2
OE
I/O OPERATION
Vcc CURRENT
X
H
X
X
Not selected
(Power Down)
X
X
L
X
High Z
I
CCSB
, I
CCSB1
Output Disabled
H
L
H
H
High Z
I
CC
I
CC
I
CC
Read
H
L
H
L
D
OUT
Write
L
L
H
X
D
IN
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
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| BS62LV2000TI | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
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