參數(shù)資料
型號: BS250
廠商: Vishay Intertechnology,Inc.
英文描述: P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-45V,夾斷電流-0.18A的P溝道增強(qiáng)型MOSFET晶體管)
中文描述: P通道增強(qiáng)型MOSFET晶體管(最小漏源擊穿電壓- 45V的,夾斷電流,0.18A的P溝道增強(qiáng)型MOSFET的晶體管)
文件頁數(shù): 2/4頁
文件大?。?/td> 96K
代理商: BS250
Siliconix
TP0610L/T, VP0610L/T, BS250
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S-52426—Rev. E, 14-Apr-97 Siliconix was formerly a division of TEMIC Semiconductors
Phone (408)988-8000
FaxBack (408)970-5600
www.siliconix.com
2
TP0610L/T
VP0610L/T
BS250
Drain-Source
Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= –10 A
–70
–60
–60
V
GS
= 0 V, I
D
= –100 A
–45
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= –1 mA
–1.9
–1
–2.4
–1
–3.5
–1
–3.5
V
DS
= 0 V, V
GS
=
20 V
10
10
Gate-Body Leakage
I
GSS
T
J
= 125 C
50
nA
V
DS
= 0 V, V
GS
=
15 V
20
Zero Gate Voltage
Drain Current
G t V lt
V
DS
= –48 V, V
GS
= 0 V
–1
–1
I
DSS
T
J
= 125 C
–200
–200
A
V
DS
= –25 V, V
GS
= 0 V
–0.5
V
DS
= –10 V, V
GS
= –4.5 V
–180
–50
On-State Drain Current
c
I
D(on)
V
= –10 V
DS
V
GS
= –10 V
L
–750
–600
mA
T
–220
V
GS
= –4.5 V, I
D
= –25 mA
11
25
Drain-Source
On-Resistance
c
V
= –10 V
GS
I
D
= –0.5 A
L
8
10
10
r
DS(on)
T
J
= 125 C
15
20
20
V
GS
= –10 V
I
D
= –0.2 A
T
6.5
10
10
14
V
DS
= –10 V, I
D
= –0.5 A
L
125
80
80
Forward Transconductance
c
g
fs
V
DS
= –10 V
I
D
= –0.1 A
T
90
60
70
mS
Diode Forward Voltage
V
SD
I
S
= –0.5 A, V
GS
= 0 V
–1.1
V
Input Capacitance
C
iss
15
60
60
Output Capacitance
C
oss
V
DS
= –25 V, V
GS
= 0 V
f = 1 MHz
10
25
25
pF
Reverse Transfer
Capacitance
C
rss
3
5
5
t
ON
8
10
Turn-On Time
t
d(on)
6
10
10
t
r
V
DD
= –25 V, R
L
= 133
–0 18 A V
I
D
–0.18 A, V
GEN
= –10 V
R
G
= 25
10
15
15
ns
t
OFF
8
10
Turn-Off Time
t
d(off)
7
15
15
t
f
8
20
20
Notes
A.
B.
C.
D.
T
= 25 C unless otherwise noted.
For DESIGN AID ONLY, not subject to production testing.
Pulse test: PW
300 s duty cycle
Switching time is essentially independent of operating temperature.
VPDS06
2%.
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