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參數(shù)資料
| 型號(hào)： | BS209 |
| 廠商： | GE Security, Inc. |
| 英文描述： | DMOS Transistors (P-Channel)(P通道DMOS晶體管) |
| 中文描述： | DMOS晶體管（P溝道）性（P通道的DMOS晶體管） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 37K |
| 代理商： | BS209 |
FEATURES
MECHANICAL DATA
Case:
TO-92 Plastic Package
Weight:
approx. 0.18 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C
ambient temperature unless otherwise specified
DMOS Transistors (P-Channel)
G
S
D
.181 (4.6)
m
.142 (3.6)
Dimensions in inches and (millimeters)
TO-92
.098 (2.5)
max.
.022 (0.55)
4/98
BS209
Symbol
Value
Unit
Drain-Source Voltage
–V
DSS
400
V
Drain-Gate Voltage
–V
DGS
400
V
Gate-Source Voltage (pulsed)
V
GS
±20
V
Drain Current (continuous) at T
amb
= 25 °C
–I
D
120
mA
Power Dissipation at T
amb
= 25 °C
P
tot
830
1)
mW
Junction Temperature
T
j
150
°C
Storage Temperature Range
T
S
–65 to +150
°C
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
Inverse Diode
Symbol
Value
Unit
Max. Forward Current (continuous)
at T
amb
= 25 °C
I
F
400
mA
Forward Voltage Drop (typ.)
at V
GS
= 0 V, I
F
= 400 mA, T
j
= 25 °C
V
F
1.0
V
High input impedance
Low gate threshold voltage
Low drain-source ON resistance
High-speed switching
No minority carrier storage time
CMOS logic compatible input
No thermal runaway
No secondary breakdown
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