參數(shù)資料
型號(hào): BRY62
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 開(kāi)關(guān)
英文描述: Silicon Planar PNPN switch(硅平面PNPN開(kāi)關(guān))
中文描述: SILICON CONTROLLED SWITCH
文件頁(yè)數(shù): 6/12頁(yè)
文件大?。?/td> 66K
代理商: BRY62
1999 Apr 22
6
Philips Semiconductors
Product specification
Silicon controlled switch
BRY62
Fig.8 Test circuit for turn-off time.
handbook, halfpage
MBB684
12 V
+
50 V
VAK
RKG-K
C
mercury
wetted
contact
16 k
2.7 k
1 k
Fig.9
Capacitance increased until C = C
opt
dashed curve disappears.
handbook, halfpage
(V)
MBB686
12
– 12
tq
C
<
Copt
C
=
Copt
time
0
Fig.10 Normalized DC current gain as a function of
anode gate current.
X is the value of h
FE
at I
C
= 10 mA; V
AG-K
= 2 V; T
amb
= 25
°
C.
handbook, halfpage
0
100
0
0.4
0.8
MBB584
50
hFE
X
IAG (mA)
VAG-K = 5 V
2 V
Fig.11 Normalized DC current gain as a function of
ambient temperature.
X is the value of h
FE
at I
AG
= 10 mA; V
AG-K
= 2 V; T
amb
= 25
°
C.
handbook, halfpage
0
1.4
1.0
0.6
50
150
MBB583
100
Tamb
o
hFE
X
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