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參數(shù)資料
| 型號： | BRY62 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 開關(guān) |
| 英文描述： | Silicon Planar PNPN switch(硅平面PNPN開關(guān)) |
| 中文描述： | SILICON CONTROLLED SWITCH |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 66K |
| 代理商： | BRY62 |
1999 Apr 22
3
Philips Semiconductors
Product specification
Silicon controlled switch
BRY62
Notes
1.
2.
Provided the I
E
rating is not exceeded.
During switching on, the device can withstand the discharge of a capacitor of a maximum value of 500 pF. This
capacitor is charged when the transistor is in cut-off condition, with a collector supply voltage of 160 V and a series
resistance of 100 k
.
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
Combined device
P
tot
T
stg
T
j
T
amb
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°
C
65
65
250
+150
150
+150
mW
°
C
°
C
°
C
see Fig.14
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient in free air
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
NPN transistor
I
CER
collector cut-off current
V
CE
= 70 V; R
BE
= 10 k
V
CE
= 70 V; R
BE
= 10 k
; T
j
= 150
°
C
I
C
= 0; V
EB
= 5 V; T
j
= 150
°
C
I
C
= 10 mA; I
B
= 1 mA
I
C
= 10 mA; I
B
= 1 mA
I
C
= 10 mA; V
CE
= 2 V
I
C
= 10 mA; V
CE
= 2 V; f = 100 MHz
I
E
= i
e
= 0; V
CB
= 20 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 1 V; f = 1 MHz
50
100
100
10
10
500
900
5
25
nA
μ
A
μ
A
mV
mV
I
EBO
V
CEsat
V
BEsat
h
FE
f
T
C
c
C
e
emitter cut-off current
collector-emitter saturation voltage
base-emitter saturation voltage
DC current gain
transition frequency
collector capacitance
emitter capacitance
MHz
pF
pF
PNP transistor
I
CEO
I
EBO
h
FE
collector cut-off current
emitter cut-off current
DC current gain
I
B
= 0; V
CE
=
70 V; T
j
= 150
°
C
I
C
= 0; V
EB
=
70 V; T
j
= 150
°
C
I
E
= 1 mA; V
CB
=
5 V
3
10
10
15
μ
A
μ
A
Combined device
V
AK
forward on-state voltage
R
KG-K
= 10 k
I
A
= 50 mA; I
AG
= 0
I
A
= 50 mA; I
AG
= 0; T
j
=
55
°
C
I
A
= 1 mA; I
AG
= 10 mA
R
KG-K
= 10 k
; I
AG
= 10 mA;
V
BB
=
2 V; (see Fig.5)
1.4
1.9
1.2
1
V
V
V
mA
I
H
holding current
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
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