參數(shù)資料
型號(hào): BR24L04FVM-W
廠商: Rohm CO.,LTD.
英文描述: 512】8 bit electrically erasable PROM
中文描述: 512】8位電可擦除可編程ROM
文件頁數(shù): 18/25頁
文件大小: 388K
代理商: BR24L04FVM-W
BR24L04-W / BR24L04F-W / BR24L04FJ-W
Memory ICs
BR24L04FV-W / BR24L04FVM-W
6) I / O circuit
Pull up resister of SDA pin
The pull up resister is needed because SDA is NMOS open drain. Decide the value of this resister (R
PU
) properly,
by considering V
IL
, I
L
characteristics of a controller which control the device and V
OH
, I
OL
characteristics of the device.
If large R
PU
is chosen, clock frequency need to be slow. In case of small R
PU
, the operating current increases.
Maximum of R
PU
Maximum of R
PU
is determined by following factor.
c
SDA rise time determined by R
PU
and the capacitance of bus line (CBUS) must be less than T
R
.
And the other timing must keep the conditions of AC spec.
d
When SDA bus is HIGH, the voltage A of SDA bus determined by a total input leak (I
L
) of the all devices
connected
to the bus and R
PU
must be enough higher than input HIGH level of a controller and the device,
including noise margin 0.2V
CC
.
18/25
A
IL
IL
MICRO
COMPUTER
BR24LXX
SDA PIN
R
PU
THE CAPACITANCE OF
BUS LINE (CBUS)
V
CC
I
L
R
PU
0.2V
CC
V
IH
R
PU
0.8V
CC
V
IH
IL
R
PU
0.8
×
3
0.7
×
3
10
×
10
6
300 [k
]
Examples : When V
CC
=
3V I
L
=
10
μ
A V
IH
=
0.7V
CC
According to 2
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