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參數(shù)資料
| 型號(hào)： | BR24L02FVM-W |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | 256x8 bit electrically erasable PROM |
| 中文描述： | 256x8位電可擦除可編程ROM |
| 文件頁(yè)數(shù)： | 18/26頁(yè) |
| 文件大小： | 391K |
| 代理商： | BR24L02FVM-W |
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BR24L02-W / BR24L02F-W / BR24L02FJ-W /
Memory ICs
BR24L02FV-W / BR24L02FVM-W
18/25
LV
CC
circuit
LV
CC
circuit inhibit write operation at low voltage, and prevent an inadvertent write. Below the LV
CC
voltage
(Typ.=1.2V), write operation is inhibited.
6) I / O circuit
Pull up resister of SDA pin
The pull up resister is needed because SDA is NMOS open drain. Decide the value of this resister (R
PU
) properly,
by considering V
IL
, I
L
characteristics of a controller which control the device and V
OH
, I
OL
characteristics of the device.
If large R
PU
is chosen, clock frequency need to be slow. In case of small R
PU
, the operating current increases.
Maximum of R
PU
Maximum of R
PU
is determined by following factor.
x
SDA rise time determined by R
PU
and the capacitance of bus line (CBUS) must be less than T
R
.
And the other timing must keep the conditions of AC spec.
y
When SDA bus is HIGH, the voltage A of SDA bus determined by a total input leak (I
L
) of the all devices
connected
to the bus and R
PU
must be enough higher than input HIGH level of a controller and the device,
including noise margin 0.2 V
CC
.
A
IL
IL
MICRO
COMPUTER
BR24LXX
SDA PIN
R
PU
THE CAPACITANCE OF
BUS LINE (CBUS)
V
CC
I
L
R
PU
0.2V
CC
≥
V
IH
R
PU
≤
0.8V
CC
V
IH
IL
R
PU
≤
0.8
×
3
0.7
×
3
10
×
10
6
≤
300 [k
]
Examples : When V
CC
=
3V I
L
=
10
μ
A V
IH
=
0.7V
CC
According to 2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BR24L16 | 2k】8 bit electrically erasable PROM |
| BR24L16-W | 2k】8 bit electrically erasable PROM |
| BR24L16F-W | 2k】8 bit electrically erasable PROM |
| BR24L16FJ-W | 2k】8 bit electrically erasable PROM |
| BR24L16FV-W | 2k】8 bit electrically erasable PROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BR24L02FVM-WE2 | 制造商:ROHM 制造商全稱:Rohm 功能描述:High Reliability Series EEPROMs I2C BUS |
| BR24L02FVM-WTR | 功能描述:電可擦除可編程只讀存儲(chǔ)器 IC 電可擦除可編程只讀存儲(chǔ)器 SRL 256-8BIT RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| BR24L02FVT-W | 制造商:ROHM 制造商全稱:Rohm 功能描述:IC BUS 2Kbit (256 x 8bit) EEPROM |
| BR24L02FVT-WE2 | 制造商:ROHM Semiconductor 功能描述:EEPROM SERIAL-I2C 2K-BIT 256 X 8 2.5V/3.3V/5V 8-PIN TSSOP-B - Tape and Reel 制造商:Rohm 功能描述:2k(256~8) 1.8V to 5.5V VA / I2C 8TSSOP-B Cut Tape 制造商:ROHM Semiconductor 功能描述:IC EEPROM SER I2C 2KBIT 8-TSSOP 制造商:ROHM Semiconductor 功能描述:I2C 2K BIT 256 X 8 2.5V/3.3V/5V 8PIN 制造商:Rohm Semiconductor 功能描述:EEPROM Serial-2Wire 2K-bit 256 x 8 2.5V/3.3V/5V 8-Pin TSSOP-B T/R |
| BR24L02FVT-WTR | 制造商:ROHM 制造商全稱:Rohm 功能描述:High Reliability Series EEPROMs I2C BUS |
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