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參數(shù)資料
| 型號(hào)： | BPW83 |
| 廠(chǎng)商： | VISHAY SEMICONDUCTORS |
| 元件分類(lèi)： | 光敏二極管 |
| 英文描述： | Photodiode PIN Chip 950nm 2-Pin Side View |
| 中文描述： | Photodiodes 60V 215mW 950nm |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 74K |
| 代理商： | BPW83 |
Document Number: 81530
Rev. 1.4, 08-Sep-08
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
411
BPW83
Silicon PIN Photodiode, RoHS Compliant
Vishay Semiconductors
Note
T
amb
= 25 °C, unless otherwise specified
BASIC CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
Breakdown voltage
Reverse dark current
TEST CONDITION
I
R
= 100 μA, E = 0
V
R
= 10 V, E = 0
V
R
= 0 V, f = 1 MHz, E = 0
V
R
= 3 V, f = 1 MHz, E = 0
E
e
= 1 mW/cm
2
,
λ
= 870 nm
E
e
= 1 mW/cm
2
,
λ
= 870 nm
E
e
= 1 mW/cm
2
,
λ
= 870 nm,
V
R
= 5 V
SYMBOL
V
(BR)
I
ro
C
D
C
D
V
o
I
k
MIN.
60
TYP.
MAX.
UNIT
V
nA
pF
pF
mV
μA
2
30
Diode capacitance
70
25
350
38
40
Open circuit voltage
Short circuit current
Reverse light current
I
ra
43
45
μA
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Noise equivalent power
Rise time
Fall time
λ
p
λ
0.5
NEP
t
r
t
f
± 65
950
deg
nm
nm
W/
√
Hz
ns
ns
790 to 1050
4 x 10
-14
100
100
V
R
= 10 V,
λ
= 870 nm
V
R
= 10 V, R
L
= 1 k
Ω
,
λ
= 820 nm
V
R
= 10 V, R
L
= 1 k
Ω
,
λ
= 820 nm
20
40
60
8
0
1
10
100
1000
100
94
8
403
V
R
= 10
V
T
am
b
- Am
b
ient Temperat
u
re (°C)
I
r
v
e
u
r
0.6
0.
8
1.0
1.2
1.4
94
8
409
V
= 5
V
λ
= 950 nm
100
8
0
60
40
20
0
I
v
e
v
e
u
r
T - Am
b
ient Temperat
u
re (°C)
r
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