參數資料
型號: BPW77N
廠商: Vishay Intertechnology,Inc.
英文描述: Silicon NPN Phototransistor(高靈敏度NPN外延平面型光晶體管)
中文描述: 硅npn型光電晶體管(高靈敏度npn型外延平面型光晶體管)
文件頁數: 3/6頁
文件大小: 82K
代理商: BPW77N
BPW77N
Vishay Telefunken
3 (6)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81527
94 8344
0
50
100
150
T
amb
– Ambient Temperature (
°
C )
0
0.5
1.0
1.5
2.0
3.5
I
c
2.5
3.0
V
CE
=5V
E
e
=1mW/cm
2
=950nm
Figure 3. Relative Collector Current vs.
Ambient Temperature
0.01
0.1
1
0.01
0.1
1
10
100
I
c
E
e
– Irradiance ( mW/cm
2
)
10
94 8349
V
CE
=5V
=950nm
BPW77NB
BPW77NA
Figure 4. Collector Light Current vs. Irradiance
0.1
1
10
0.1
1
10
I
c
V
CE
– Collector Emitter Voltage ( V )
100
94 8350
=950nm
E
e
=1mW/cm
2
0.5mW/cm
2
0.2mW/cm
2
0.1mW/cm
2
0.05mW/cm
2
0.02mW/cm
2
Figure 5. Collector Light Current vs.
Collector Emitter Voltage
0.1
1
10
0
4
8
12
16
20
C
C
V
CE
– Collector Emitter Voltage ( V )
100
94 8247
f=1MHz
Figure 6. Collector Emitter Capacitance vs.
Collector Emitter Voltage
0
4
8
12
16
94 8253
0
2
4
6
8
12
t
o
I
C
– Collector Current ( mA )
10
o
V
CE
=5V
R
L
=100
=950nm
t
off
t
on
Figure 7. Turn On/Turn Off Time vs. Collector Current
400
600
1000
0
0.2
0.4
0.6
0.8
1.0
S
r
– Wavelength ( nm )
94 8348
800
Figure 8. Relative Spectral Sensitivity vs. Wavelength
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