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參數(shù)資料
| 型號： | BPW17N |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光敏三極管 |
| 英文描述： | Phototransistor Chip Silicon 825nm 2-Pin T-3/4 |
| 中文描述： | Photodetector Transistors NPN Phototransistor 32V 100mW 825nm |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 87K |
| 代理商： | BPW17N |
BPW17N
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 23-Aug-11
3
Document Number: 81516
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Fig. 3 - Collector Light Current vs. Irradiance
Fig. 4 - Collector Light Current vs. Collector Emitter Voltage
Fig. 5 - Collector Emitter Capacitance vs. Collector Emitter Voltage
Fig. 6 - Turn-on/Turn-off Time vs. Collector Current
Fig. 7 - Relative Spectral Sensitivity vs. Wavelength
Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement
0.01
0.1
1
0.001
0.01
0.1
1
10
I
c
-
u
r
E
e
- Irradiance (mW/cm
2
)
10
94 8313
V
CE
= 5 V
= 950 nm
λ
0.1
1
10
0.1
1
10
I
c
-
u
r
V
CE
- Collector Emitter Voltage (V)
100
94 8242
E
e
= 1mW/cm
2
= 950 nm
0.5 mW/cm
2
0.2 mW/cm
2
λ
0.1
1
10
0
4
8
12
16
20
C
C
V
CE
- Collector Emitter Voltage (V)
100
94 8240
f = 1 MHz
0
4
8
12
0
2
4
6
8
12
t
o
/
-
u
r
u
r
o
I
C
- Collector C
u
rrent (mA)
16
94 8238
10
V
CE
= 5 V
R
= 100
Ω
λ
= 950 nm
t
off
t
on
400
600
1000
0
0.2
0.4
0.6
0.8
1.0
S
λ
)
-
v
e
v
i
r
-Wa
v
elength (nm)
94 8241
800
λ
0.4
0.2
0
94 8243
0.6
0.9
0.8
0°
30°
10°
20°
40°
50°
60°
70°
80°
0.7
1.0
S
r
v
e
v
i
u
l
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BPW17N | 制造商:Vishay Intertechnologies 功能描述:PHOTOTRANSISTOR T3/4 |
| BPW17N_05 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon NPN Phototransistor |
| BPW17N_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon NPN Phototransistor, |
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