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參數(shù)資料
| 型號： | BPW17N |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光敏三極管 |
| 英文描述： | Phototransistor Chip Silicon 825nm 2-Pin T-3/4 |
| 中文描述： | Photodetector Transistors NPN Phototransistor 32V 100mW 825nm |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 87K |
| 代理商： | BPW17N |
BPW17N
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 23-Aug-11
2
Document Number: 81516
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Collector Dark Current vs. Ambient Temperature
Fig. 2 - Relative Collector Current vs. Ambient Temperature
0
20
40
60
80
0
25
50
75
100
125
P
V
w
e
T
am
b
- Am
b
ient Temperat
u
re (°C)
100
94 8308
R
thJA
= 450 K/W
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Collector emitter breakdown voltage
Collector emitter dark current
Collector emitter capacitance
V
CE
= 5 V, f = 1 MHz, E = 0
E
e
= 1 mW/cm
2
,
λ
= 950 nm,
TEST CONDITION
I
C
= 1 mA
V
CE
= 20 V, E = 0
SYMBOL
V
(BR)CEO
I
CEO
C
CEO
MIN.
32
TYP.
MAX.
UNIT
V
nA
pF
1
8
200
Collector light current
V
CE
= 5 V
I
ca
0.5
1.0
mA
Angle of half sensitivity
W
avelength of peak sensitivity
Range of spectral bandwidth
λ
p
λ
0.1
± 12
825
deg
nm
nm
450 to 1040
Collector emitter saturation voltage
E
e
= 1 mW/cm
2
,
λ
= 950 nm,
I
C
= 0.1 mA
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω
V
CEsat
0.3
V
Turn-on time
Turn-off time
Cut-off frequency
t
on
t
off
f
c
4.8
5.0
120
μs
μs
kHz
94 8235
20
I
C
u
r
100
40
60
80
T
am
b
- Am
b
ient Temperat
u
re (°C)
10
0
10
1
10
2
10
3
10
4
V
CE
= 20 V
0
0.6
0.8
1.0
1.2
1.4
2.0
20
40
60
80
100
1.6
1.8
= 950 nm
94 8239
T
am
b
- Am
b
ient Temperat
u
re (°C)
I
c
v
e
u
r
V
CE
= 5 V
E
= 1 mW/cm
2
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