參數(shù)資料
型號: BM29F400T
英文描述: 4 MEGABIT (512K x 8/ 256K x 16) 5 VOLT SECTOR ERASE CMOS FLASH MEMORY
中文描述: 4兆位(為512k × 8 / 256K × 16)5伏扇區(qū)擦除的CMOS閃存
文件頁數(shù): 32/37頁
文件大?。?/td> 265K
代理商: BM29F400T
BRIGHT
Microelectronics
Inc.
BM29F400T/BM29F400B
- 32 -
Switching Waveforms, continued
WC
t
AH
t
AS
t
GHWL
t
WP
t
WHWH1
t
CS
t
WPH
t
D
H
t
DS
t
5555H
PA
PA
Data Polling
D
DQ7
PD
A0H
Address
CE
OE
WE
Data
5.0V
Vcc
GND
OUT
Figure 19. Alternate CE Controlled Program Operation Timings
Notes:
1. PA is address of the memory location to be programmed.
2. PD is data to be programmed at BYTE address.
3.
DQ7
is the output of the complement of the data written to the device.
4. D
OUT
is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
6. These waveforms are for the x16 mode.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BM29F400T-12TC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
BM29F400T-15TC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
BM29F400T-90TC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
BM-2A 制造商:Anderson Power Products (APP) 功能描述:BENCH MOUNT
BM-2BK 制造商:未知廠家 制造商全稱:未知廠家 功能描述:CASE DESKTOP