參數(shù)資料
型號(hào)： BM29F400T
英文描述： 4 MEGABIT (512K x 8/ 256K x 16) 5 VOLT SECTOR ERASE CMOS FLASH MEMORY
中文描述： 4兆位（為512k × 8 / 256K × 16）5伏扇區(qū)擦除的CMOS閃存
文件頁(yè)數(shù)： 16/37頁(yè)
文件大?。?/td> 265K
代理商： BM29F400T
BRIGHT
Microelectronics
Inc.
BM29F400T/BM29F400B
- 16 -
Logical Inhibit
Writing is inhibited by holding any one of
OE
= V
IL
,
CE
= V
IH
, or
WE
= V
IH
. To initiate a write cycle
CE and WE must be a logical "0" while OE is a logical "1".
Power-up Write Inhibit
Power-up of the device with
WE
=
CE
= V
IL
and
OE
= V
IH
will not accept commands on the rising
edge of
WE
. The internal state machine is automatically
RESET
to the Read mode on power-up.
Sector Unprotect
The BM29F400 also features a sector unprotect mode, so that protected sectors may be unprotected
to incorporate any changes in the code. Protecting all sectors is necessary before unprotecting any
sector(s). Sector unprotection is accomplished in a PROM programmer.
START
Write Program Command Sequence
(see below)
Data Polling Device
Last Address
NO
YES
Programming Completed
Program Command Sequence (Address/Command)
5555H/AAH
2AAAH/55H
5555H/A0H
Program Address/ Program Data
Increment Address
Figure 1. Internal Programming Algorithm
相關(guān)PDF資料
PDF描述
BM29F400T-12TC x8/x16 Flash EEPROM
BM29F400T-15TC x8/x16 Flash EEPROM
BM29F400T-90TC x8/x16 Flash EEPROM
BMS-SAX300MM GUIDE PCB 300MM STRIP
BN101 Optoelectronic
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BM29F400T-12TC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
BM29F400T-15TC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
BM29F400T-90TC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
BM-2A 制造商:Anderson Power Products (APP) 功能描述:BENCH MOUNT
BM-2BK 制造商:未知廠家 制造商全稱:未知廠家 功能描述:CASE DESKTOP
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