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| 型號(hào)： | BLY89 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | VHF power transistor |
| 中文描述： | 甚高頻功率晶體管 |
| 文件頁(yè)數(shù)： | 8/11頁(yè) |
| 文件大?。?/td> | 68K |
| 代理商： | BLY89 |
August 1986
8
Philips Semiconductors
Product specification
VHF power transistor
BLY89C
Fig.9
handbook, halfpage
0
5
10
15
0
25
MGP869
PL
(W)
PS (W)
f = 175 MHz
typical values
VCC = 13.5 V
VCC = 12.5 V
Th = 25
°
C
Th = 70
°
C
Fig.10
handbook, halfpage
0
10
5
0
150
100
50
0
Gp
(dB)
40
MGP870
20
η
(%)
PL (W)
f = 175 MHz
Th = 25
°
C
typical values
VCC = 13.5 V
VCC = 12.5 V
Gp
η
Fig.11 R.F. soar.
handbook, halfpage
(W)
VSWR = 1
1
1.1
1.2
1.3
0
MGP871
30
20
10
VCC
VCCnom
50
VSWR =
10
PS
PSnom
Conditions for R.F. SOAR
f = 175 MHz
T
h
= 70
°
C
R
th mb-h
= 0,45 K/W
V
CCnom
= 13,5 V
P
S
= P
Snom
at V
CCnom
= 13,5 V and VSWR = 1
The transistor has been developed for use with
unstabilized supply voltages. As the output power and
drive power increase with the supply voltage, the nominal
output power must be derated in accordance with the
graph for safe operation at supply voltages other than the
nominal. The graph shows the permissible output power
under nominal conditions (VSWR = 1), as a function of the
expected supply over-voltage ratio with VSWR as
parameter.
The graph applies to the situation in which the drive
(P
S
/P
Snom
) increases linearly with supply over-voltage
ratio.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BM11W | BOX MULTIPURPOSE WHITE |
| BM12W | BOX MULTIPURPOSE WHITE |
| BM22W | BOX MULTIPURPOSE WHITE |
| BM1 | TRIGGERMODUL EINPHASIG |
| BM3 | TRIGGERMODUL DREIPHASIG |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLY89C | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| BLY90 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| BLY91A | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON POWER TRANSISTOR |
| BLY91C | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| BLY92 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
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