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參數(shù)資料
| 型號： | BLY89 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | VHF power transistor |
| 中文描述： | 甚高頻功率晶體管 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 68K |
| 代理商： | BLY89 |
August 1986
2
Philips Semiconductors
Product specification
VHF power transistor
BLY89C
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated mobile, industrial
and military transmitters with a
nominal supply voltage of 13,5 V. The
transistor is resistance stabilized and
is guaranteed to withstand severe
load mismatch conditions with a
supply over-voltage to 16,5 V. It has a
3/8" capstan envelope with a ceramic
cap. All leads are isolated from the
stud.
QUICK REFERENCE DATA
R.F. performance up to T
h
= 25
°
C in an unneutralized common-emitter class-B circuit
MODE OF OPERATION
V
CC
V
f
MHz
P
L
W
G
p
dB
>
6
η
%
>
70
z
i
Y
L
mS
c.w.
13,5
175
25
1,6
+
j1,4
210
+
j5,5
PIN CONFIGURATION
handbook, halfpage
e
c
b
MBB012
Fig.1 Simplified outline and symbol.
halfpage
MSB056
2
3
1
4
PINNING - SOT120
PIN
DESCRIPTION
1
2
3
4
collector
emitter
base
emitter
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BM11W | BOX MULTIPURPOSE WHITE |
| BM12W | BOX MULTIPURPOSE WHITE |
| BM22W | BOX MULTIPURPOSE WHITE |
| BM1 | TRIGGERMODUL EINPHASIG |
| BM3 | TRIGGERMODUL DREIPHASIG |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLY89C | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| BLY90 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| BLY91A | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON POWER TRANSISTOR |
| BLY91C | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| BLY92 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
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