參數(shù)資料
型號(hào): BLY88C
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: VHF power transistor
中文描述: VHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-120A, 4 PIN
文件頁(yè)數(shù): 3/11頁(yè)
文件大小: 63K
代理商: BLY88C
August 1986
3
Philips Semiconductors
Product specification
VHF power transistor
BLY88C
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (V
BE
= 0)
peak value
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (average)
Collector current (peak value); f
>
1 MHz
R.F. power dissipation (f
>
1 MHz); T
mb
= 25
°
C
Storage temperature
Operating junction temperature
V
CESM
V
CEO
V
EBO
I
C(AV)
I
CM
P
rf
T
stg
T
j
max.
max.
max.
max.
max.
max.
65 to
+
150
°
C
max.
36 V
18 V
4 V
3 A
8 A
36 W
200
°
C
Fig.2 D.C. SOAR.
handbook, halfpage
0
2.5
1.5
0.5
10
20
MGP843
IC
(A)
VCE (V)
Tmb = 25
°
C
Th = 70
°
C
Fig.3
R.F. power dissipation; V
CE
16,5 V;
f
>
1 MHz.
I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch
handbook, halfpage
0
40
20
0
50
100
MGP844
Prf
(W)
Th (
°
C)
Ι
ΙΙΙ
derate by 0.2 W/K
0.16 W/K
ΙΙ
THERMAL RESISTANCE
(dissipation = 15 W; T
mb
= 77
°
C, i.e. T
h
= 70
°
C)
From junction to mounting base (d.c. dissipation)
From junction to mounting base (r.f. dissipation)
From mounting base to heatsink
R
th j-mb(dc)
R
th j-mb(rf)
R
th mb-h
= 6,55
= 4,95
= 0,45
K/W
K/W
K/W
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