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參數(shù)資料
| 型號： | BLY88C |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-120A, 4 PIN |
| 文件頁數(shù)： | 2/11頁 |
| 文件大小： | 63K |
| 代理商： | BLY88C |
August 1986
2
Philips Semiconductors
Product specification
VHF power transistor
BLY88C
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated mobile, h.f. and
v.h.f. transmitters with a nominal
supply voltage of 13,5 V. The
transistor is resistance stabilized and
is guaranteed to withstand severe
load mismatch conditions with a
supply over-voltage to 16,5 V.
It has a 3/8" capstan envelope with a
ceramic cap. All leads are isolated
from the stud.
QUICK REFERENCE DATA
R.F. performance up to T
h
= 25
°
C in an unneutralized common-emitter class-B circuit
MODE OF OPERATION
V
CE
V
f
MHz
P
L
W
G
p
dB
η
%
z
i
Y
L
mS
c.w.
c.w.
13,5
12,5
175
175
15
15
>
typ.
8,0
7,5
>
typ. 67
60
2,3
+
j2,2
130
j4,4
PIN CONFIGURATION
handbook, halfpage
e
c
b
MBB012
Fig.1 Simplified outline and symbol.
halfpage
MSB056
2
3
1
4
PINNING - SOT120
PIN
DESCRIPTION
1
2
3
4
collector
emitter
base
emitter
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BLY89C | VHF power transistor |
| BLY89 | VHF power transistor |
| BM11W | BOX MULTIPURPOSE WHITE |
| BM12W | BOX MULTIPURPOSE WHITE |
| BM22W | BOX MULTIPURPOSE WHITE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLY89 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:VHF power transistor |
| BLY89C | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| BLY90 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| BLY91A | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON POWER TRANSISTOR |
| BLY91C | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
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