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參數(shù)資料
| 型號(hào)： | BLX65S |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-39 |
| 封裝： | TO-39, 3 PIN |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 28K |
| 代理商： | BLX65S |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1202
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
A
= 25
O
C
SYMBOL
BV
CEO
I
C
= 50 mA
BV
CES
I
C
= 50 mA
BV
EBO
I
E
= 1.0 mA
I
CBO
V
CB
= 15 V
h
FE
V
CB
= 5.0 V I
C
= 50 mA
NONE
TEST CONDITIONS
MINIMUM
16
TYPICAL
MAXIMUM
UNITS
V
V
V
mA
---
36
2.5
1.0
20
200
C
OB
V
CB
= 12.5 V f = 1.0 MHz
15
pF
G
PE
η
C
V
CE
= 12.5 V P
OUT
= 2.0 W f = 470 MHz
7.0
55
dB
%
NPN SILICON HIGH FREQUENCY TRANSISTOR
ASI BLX65S
DESCRIPTION
The
ASI BLX65S
is Designed for
12.5 V Class C Amplifier Applications
in the 100 to 500 MHz Frequency
Range.
FEATURES INCLUDE:
Economical
TO-39
Package
8 dB Typical Gain
Emitter Ballasting
MAXIMUM RATINGS
I
C
750 mA
V
CBO
36 V
P
DISS
5.0 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +200
O
C
35
O
C / W
T
J
T
STG
θ
JC
PACKAGE STYLE TO-39
1 = EMITTER 2 = BASE
3 = COLLECTOR (CASE)
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