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參數(shù)資料
| 型號： | BLW98 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF linear power transistor |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-122A, 4 PIN |
| 文件頁數(shù)： | 5/13頁 |
| 文件大?。?/td> | 80K |
| 代理商： | BLW98 |
August 1986
5
Philips Semiconductors
Product specification
UHF linear power transistor
BLW98
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified
Notes
1.
2.
Measured under pulse conditions: t
p
≤
300
μ
s;
δ ≤
0,02.
Measured under pulse conditions: t
p
≤
50
μ
s;
δ ≤
0,01.
Collector-emitter breakdown voltage
V
BE
= 0; I
C
= 10 mA
open base, I
C
Emitter-base breakdown voltage
open collector, I
E
= 5 mA
D.C. current gain
(1)
I
C
= 850 mA; V
CE
= 25 V
V
(BR)CES
V
(BR)CEO
>
>
50 V
27 V
V
(BR)EBO
>
3,5 V
>
typ.
15
40
h
FE
Collector-emitter saturation voltage
(1)
I
C
= 500 mA; I
B
= 100 mA
Transition frequency at f = 500 MHz
(2)
I
E
= 850 mA; V
CB
= 25 V
Collector capacitance at f = 1 MHz
I
E
= I
e
= 0; V
CB
= 25 V
V
CEsat
typ.
0,25 V
f
T
typ.
2,5 GHz
typ.
<
24
30
pF
pF
C
c
Feedback capacitance at f = 1 MHz
I
C
= 50 mA; V
CE
= 25 V
Collector-stud capacitance
C
re
C
cs
typ.
typ.
15 pF
1,2 pF
Fig.5 Typical values; V
CE
= 25 V.
handbook, halfpage
2
0.5
1
1.5
1
10
1
10
2
MGP720
Th = 70
°
C
25
°
C
IC
(A)
VBE (V)
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