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參數(shù)資料
| 型號(hào)： | BLW98 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | UHF linear power transistor |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-122A, 4 PIN |
| 文件頁(yè)數(shù)： | 3/13頁(yè) |
| 文件大?。?/td> | 80K |
| 代理商： | BLW98 |
第1頁(yè)第2頁(yè)當(dāng)前第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)
August 1986
3
Philips Semiconductors
Product specification
UHF linear power transistor
BLW98
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage
(peak value); V
BE
= 0
open base
Emitter-base voltage (open collector)
Collector current
d.c.
(peak value); f
>
1 MHz
Total power dissipation at T
h
= 70
°
C
Storage temperature
Operating junction temperature
V
CESM
V
CEO
V
EBO
max.
max.
max.
50 V
27 V
3,5 V
I
C
I
CM
P
tot
T
stg
T
j
max.
max.
max.
65 to
+
150
°
C
max.
2 A
4 A
21,5 W
200
°
C
Fig.2 D.C. SOAR.
(1) Second breakdown limit (independent of temperature).
handbook, halfpage
IC
(A)
VCE (V)
1
10
1
MGP717
1
10
10
2
Th = 70
°
C
Tmb = 25
°
C
(1)
Fig.3 Power derating curve vs. temperature.
handbook, halfpage
0
30
20
10
50
100
MGP718
Ptot
(W)
Th (
°
C)
THERMAL RESISTANCE
(dissipation = 21,25 W; T
mb
= 82,75
°
C, T
h
= 70
°
C)
From junction to mounting base
From mounting base to heatsink
R
th j-mb
R
th mb-h
=
=
5,45 K/W
0,6 K/W
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