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參數(shù)資料
| 型號： | BLW97 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | HF power transistor |
| 中文描述： | 15 A, 33 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 73K |
| 代理商： | BLW97 |
August 1986
4
Philips Semiconductors
Product specification
HF power transistor
BLW97
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified
Notes
1.
2.
Measured under pulse conditions: t
p
= 500
μ
s.
Measured under pulse conditions: t
p
= 300
μ
s;
δ
= 0,02.
Collector-emitter breakdown voltage
V
BE
= 0; I
C
= 50 mA
I
C
= 100 mA; open base
Emitter-base breakdown voltage
I
E
= 20 mA; open collector
Collector cut-off current
V
CE
= 33 V; V
BE
= 0
Second breakdown energy; L = 25 mH; f = 50 Hz
open base
R
BE
= 10
D.C. current gain
(1)
I
C
= 10 A; V
CE
= 5 V
D.C. current gain ratio of matched devices
(1)
I
C
= 10 A; V
CE
= 5 V
Collector-emitter saturation voltage
(1)
I
C
= 25 A; I
B
= 5 A
Transition frequency at f = 100 MHz
(2)
I
E
= 10 A; V
CB
= 28 V
I
E
= 20 A; V
CB
= 28 V
Collector capacitance at f = 1 MHz
I
E
= i
e
= 0; V
CB
= 28 V
Feedback capacitance at f = 1 MHz
I
C
= 0; V
CE
= 28 V
Collector-flange capacitance
V
(BR)CES
V
(BR)CEO
>
>
65 V
33 V
V
(BR)EBO
>
4 V
I
CES
<
20 mA
E
SBO
E
SBR
>
>
typ.
15
20 mJ
20 mJ
30
h
FE
to 50
h
FE1
/h
FE2
<
1,2
V
CEsat
typ.
2,4 V
f
T
f
T
typ.
typ.
230 MHz
235 MHz
C
c
typ.
380 pF
C
re
C
cf
typ.
typ.
235 pF
4,5 pF
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相關代理商/技術參數(shù) |
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|---|---|
| BLW97/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR RF SOT-121 |
| BLW98 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| BL-WD03J4 | 制造商:YSTONE 制造商全稱:Yellow Stone Corp 功能描述:ULTRA BRIGHT LED LAMPS (ROUND TYPES) |
| BL-WG33J4 | 制造商:YSTONE 制造商全稱:Yellow Stone Corp 功能描述:ULTRA BRIGHT LED LAMPS (ROUND TYPES) |
| BL-WJ13J4 | 制造商:YSTONE 制造商全稱:Yellow Stone Corp 功能描述:ULTRA BRIGHT LED LAMPS (ROUND TYPES) |
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