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參數(shù)資料
| 型號： | BLW97 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | HF power transistor |
| 中文描述： | 15 A, 33 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 3/11頁 |
| 文件大小： | 73K |
| 代理商： | BLW97 |
August 1986
3
Philips Semiconductors
Product specification
HF power transistor
BLW97
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (peak value)
V
BE
= 0
open base
Emitter-base voltage (open collector)
Collector current
average
peak value; f
>
1 MHz
Total d.c. power dissipation at T
h
= 25
°
C
R.F. power dissipation
f
>
1 MHz; T
h
= 25
°
C
Storage temperature
Operating junction temperature
V
CESM
V
CEO
V
EBO
max.
max.
max.
65 V
33 V
4 V
I
C(AV)
I
CM
P
tot(d.c.)
max.
max.
max.
15 A
50 A
190 W
P
tot(rf)
T
stg
T
j
max.
230 W
65 to
+
150
°
C
max.
200
°
C
Fig.2 D.C. SOAR.
handbook, halfpage
2
10
1
MGP703
1
10
10
2
IC
(A)
VCE (V)
Th = 70
°
C
Tmb = 25
°
C
Fig.3
Power/temperature derating curves.
I Continuous d.c. operation
II Continuous r.f. operation (f
>
1 Mhz).
III Short-time operation during mismatch; (f
>
1 MHz).
handbook, halfpage
0
40
120
50
150
250
80
MGP704
Ptot
(W)
Th (
°
C)
ΙΙ
ΙΙΙ
Ι
THERMAL RESISTANCE
(dissipation = 120 W; T
h
= 25
°
C i.e. T
mb
= 49
°
C)
From junction to mounting base
(d.c. dissipation)
From junction to mounting base
(r.f. dissipation)
From mounting base to heatsink
R
th j-mb(dc)
=
0,63 K/W
R
th j-mb(rf)
R
th mb-h
=
=
0,48 K/W
0,20 K/W
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