參數(shù)資料
型號(hào): BLW90
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF power transistor
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-122A, 4 PIN
文件頁(yè)數(shù): 7/11頁(yè)
文件大?。?/td> 58K
代理商: BLW90
August 1986
7
Philips Semiconductors
Product specification
UHF power transistor
BLW90
The circuit and the components are situated on one side of the PTFE fibre-glass board, the other side being fully
metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu
straps are used for a direct contact between upper and lower sheets.
Fig.8 Component layout and printed-circuit board for 470 MHz test circuit.
handbook, full pagewidth
MGP666
rivet
48
94
strap
strap
C1
C2
L1
L2
L3
L4
R1
L5
L6
C6
C5
L7
C3
R2
C4
+
VCC
相關(guān)PDF資料
PDF描述
BLW97 HF power transistor
BLW98 UHF linear power transistor
BLX94C UHF power transistor
BLX98 TRANSISTOR | BJT | NPN | 27V V(BR)CEO | 2A I(C) | SOT-48B
BLY11 TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | TO-3
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BLW91 制造商:未知廠家 制造商全稱:未知廠家 功能描述:RF Power Transistors for UHF
BLW96 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLW96/01,112 功能描述:射頻雙極電源晶體管 Dual N-CH 340W 10mA RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray
BLW96/B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR RF SOT-121
BLW97 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:HF power transistor