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參數(shù)資料
| 型號： | BLW87 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-123A, 4 PIN |
| 文件頁數(shù)： | 7/11頁 |
| 文件大小： | 81K |
| 代理商： | BLW87 |
August 1986
7
Philips Semiconductors
Product specification
VHF power transistor
BLW87
The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully
metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu
straps are used for a direct contact between upper and lower sheets.
Fig.8 Component layout and printed-circuit board for 175 MHz test circuit.
handbook, full pagewidth
MGP605
1888MJK
1888MJK
C1
C2
R1
C3a
C4
C5
R2
C7
C8
C3b
C6b
C6a
L8
L3
L2
L1
L5
L7
L6
+
VCC
rivet
72
150
L4
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相關(guān)代理商/技術(shù)參數(shù) |
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| BLW89 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:RF Power Transistors for UHF |
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| BLW90 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
| BLW91 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:RF Power Transistors for UHF |
| BLW96 | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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